====== Growing Si Nanowires ======
Growing Si Nanowires from Nanochannel Templates at Place of Use—“Grow-in-Place” Technology 
<style float-left center>80nm SiNW on Glass\\ {{research:sjf2:page2a.jpg?80}}</style>

<style float-left center>150nm SiNW on Glass\\ {{research:sjf2:page2b.jpg?80}}</style>

==== NW growth by extrusion approach ====
Self-positioned Nanowires offer easy subsequent fabrication. \\ 
As grown, NW’s are positioned, oriented, and ready for subsequent processing into sensor devices, transistors, field emission tips. 

==== New Transistor Structure ====

Proposed, demonstrated, and now further developing the new AMOSFET transistor concept.\\ 
This new device concept shows excellent transistor characteristics (Applied Phys. Lett., in press)
<style float-left>{{research:sjf2:page1a.jpg?80}}{{research:sjf2:page1b.jpg?80}}</style>

==== Mercury Nanowire Sensors ====

<style float-left>Sensors exhibit a very reproducible\\ response to ionic and elemental Hg\\ {{research:sjf2:page3a.jpg?80}}{{research:sjf2:page3b.jpg?80}} </style>


<style>SEM image of 100nm wide\\ Au nanowire Hg sensors.\\ {{research:sjf2:page3c.jpg?80}}\\ </style>
===  ===
<style left>Due to high surface to volume ratio of nano-scale, devices are more sensitive than thin film versions. \\ \\ Fonash Group 2007</style>