Publications

Refereed Journal Publications

  1. A. S. Raghavan, T. A. Palmer, K. C. Kragh-Buetow, A. C. Domask, E. W. Reutzel, S. E. Mohney, and T. DebRoy, “Employing microsecond pulses to form laser-fired contacts in photovoltaic devices,” Progress in Photovoltaics DOI: 10.1002/pip.2523 (2014).
  2. Ashish Agrawal, Joyce Lin, Michael Barth, Ryan White, Bo Zheng, Saurabh Chopra, Shashank Gupta, Ke Wang, Jerry Gelatos, Suzanne E. Mohney, and Suman Datta, “Fermi Level Depinning and Contact Resistivity Reduction Using a Titania Interlayer n-Silicon Metal-Insulator-Semiconductor Ohmic Contacts,” Applied Physics Letters 104(11) Article 112101 (2014).
  3. M. A. Abraham, S-Y. Yu, W. H. Choi, R. T. P. Lee, and S. E. Mohney, “Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n+ In0.53Ga0.47As,” Journal of Applied Physics 116, 164506-1–164506-6 (2014).
  4. W. H. Choi, G. J. You, M. Abraham, S. Y. Yu, J. Liu, L. Wang, J. Xu and S. E. Mohney, “Sidewall passivation for InGaN/GaN nanopillar light emitting diodes,” Journal of Applied Physics 116, Article 013103-1­–013103-6 (2014).
  5. J. D. Yearsley, J. C. Lin, and S. E. Mohney, “Reduction of Ohmic Contact Resistance of Solid Phase Regrowth Contacts to n-InGaAs Using a Sulfur Pretreatment,” IEEE Electron Device Letters 34(9): 1184–1186 (2013).
  6. J. C. Lin, S. Y. Yu, and S. E. Mohney, “Characterization of Low-resistance Ohmic Contacts to n- and p-type InGaAs,” Journal of Applied Physics 114(4): Article 044504 (2013).
  7. K. L. Andre, D. M. Zhang, H. R. Gutierrez, E. C. Dickey, N. S. Samarth, and S. E. Mohney, “Characterization of Zn1-xMnxSe nanowires and nanoribbons with cation sublattice ordering,” Journal of Crystal Growth 375: 95–99 (2013).
  8. L. Romasco-Tremper, S. E. Mohney, K. L. Andre, J. C. Lin, and C. L. Muhlstein, “Softening under membrane contact stress due to ultra-thin Ru coatings on Au films,” Materials Science and Engineering A 565: 172–179 (2013).
  9. K. C. Kragh-Buetow, X. Weng, E. D. Readinger, M. Wraback, and S. E. Mohney, “Effect of polarity on Ni/InN interfacial reactions,” Applied Physics Letters 102(2): Article 021607 (2013).
  10. R. Dormaier and S. E. Mohney, “Factors Controlling the Resistance of Contacts to n-InGaAs,” J. Appl. Phys. 30, 031209 (2012).
  11. N. S. Dellas, C. J. Schuh, and S. E. Mohney, “Silicide Formation in Contacts to Silicon Nanowires,” J. Mater. Sci. 40, 6189–6205 (2012).
  12. 12. M. Abraham, X. J. Weng, W. H. Choi, B. P. Downey, and S. E. Mohney, “Extreme sensitivity of contact resistance to variations in the interfacial composition of Ti/Al-based contacts to N-face GaN/AlGaN heterostructures,” Appl. Phys. Lett. 101, 243504 (2012).
  13. J. D. Yearsley, J. C. Lin, E. Hwang. S. Datta, and S. E. Mohney, “Ultra low-resistance palladium silicide Ohmic contacts to lightly doped n-InGaAs,” J. Appl. Phys. 112, 054510 (2012).
  14. F. Zhang, J. Liu, G. J. You, C. F. Zhang, S. E. Mohney, M. J. Park, J. S. Kwak, Y. Q. Wang, D. D. Koleske, and J. Xu, “Nonradiative Energy Transfer Between Colloidal Quantum Dot-Phosphors and Nanopillar Nitride LEDs,” Optics Express 20, A333–A339 (2012).
  15. C. M. Eichfeld, S. S. A. Gerstl, T. Prosa, Y. Ke, J. M. Redwing and S. E. Mohney, “Local Electrode Atom Probe Analysis of Silicon Nanowires Grown with an Aluminum Catalyst,” Nanotechnology 23, 215205 (2012).
  16. J. Liang, J. Wang, A. Paul, B. Cooley, D. Rench, N. Dellas, S. E. Mohney, R. Engel-Herbert, and N. Samarth, “Measurement and Simulation of Anisotropic Magnetoresistance in Single GaAs/MnAs Core/Shell Nanowires,” Appl. Phys. Lett. 100, 182402 (2012).
  17. J. E. Brom, Y. Ke, R. Du, D. Won, X. Weng, K. Andre, J. C. Gagnon, S. E. Mohney, Q. Li, K. Chen, X. X. Xi, and J. M. Redwing, Appl. Phys. Lett. 100, 162110 (2012).
  18. B. P. Downey, J. R. Flemish, and S. E. Mohney, “Investigation of Polarity Effects on the Degradation of Pd/Ti/Pt Ohmic Contacts to p-type SiC Under Current Stress,” J. Vac. Sci. Technol. B 29, 061205 (2011).
  19. J. A. Howell, S. E. Mohney, and C. L. Muhlstein, “Developing Ni-Al and Ru-Al Thin Films for Microelectromechanical Systems,” J. Vac. Sci. Technol. B 29, 042002–13 (2011).
  20. S. M. Eichfeld, H. Shen, C. M. Eichfeld, S. E. Mohney, E. C. Dickey, and J. M. Redwing, “Gas Phase Equilibrium Limits on the Vapor–Liquid–Solid Growth of Epitaxial Silicon Nanowires using SiCl4,” J. Mater. Res. DOI: 10.1557/jmr.2011.144 (2011).
  21. K. Sarpatwari, O. O. Awadelkarim, L. Passmore, T-T. Ho, M-W. Kuo, N. S. Dellas, T. S. Mayer, and S. E. Mohney, “Low Frequency Three Terminal Charge Pumping Applied to Silicon Nanowire Field-Effect-Transistors” IEEE Trans. Nanotechnol. 10, 871–874 (2011).
  22. N. S. Dellas, M. Abraham, S. Minassian, C. Kendrick, and S. E. Mohney, “Kinetics of Reactions of Ni Contact Pads with Silicon Nanowires,” J. Mater. Res. DOI: 10.1557/jmr.2011.188 (2011).
  23. K. Sarpatwari, S. E. Mohney, and O. O. Awadelkarim, “Effects of Barrier Height Inhomogeneities on the Determination of the Richardson Constant,” J. Appl. Phys. 109, Article 014510 (2011).
  24. S. A. Gao, C. F. Zhang, Y. J. Liu, H. P. Su, L. Wei, T. Huang, N. Dellas, S. Z. Shang, S. E. Mohney, J. K. Wang, and J. A. Xu, “Lasing from Colloidal InP/ZnS Quantum Dots,” Optics Express 19, 5528–5535 (2011).
  25. J. A. Howell, C. L. Muhlstein, B. Z. Liu, Q. Zhang, and S. E. Mohney, “Oxidation of RuAl and NiAl Thin Films: Evolution of Surface Morphology and Electrical Resistance,” J. Microelectromech. Syst. 20, 933–942 (2011).
  26. Z. Tan, Y. Zhang, C. Xie, H. P. Su, J. Liu, C. F. Zhang, N. Dellas, S. E. Mohney, Y. Q. Wang, J. K. Wang and J. Xu, “Near-Band-Edge Electroluminescence from Heavy-Metal-Free Quantum Dots,” Adv. Mater. 23, 3553–3558 (2011).
  27. Y. Zhang, C. Xie, H. Su, J. Liu, S. Pickering, Y. Wang, W. W. Yu, J. Wang, Y. Wang, J. Hahm, N. S. Dellas, S. E. Mohney, and J. Xu, “Employing heavy metal-free colloidal quantum dots in solution-processed white light-emitting diodes,” Nano Letters 11, 329­–332 (2011). 
  28. B.P. Downey, S.E. Mohney, and J.R. Flemish, “Improved Stability of Pd/Ti Contacts to p-type SiC Under Continuous DC and Pulsed DC Current Stress,” J. Electron. Mater. 40, 406-412 (2011).
  29. B. P. Downey, S. Datta, and S. E. Mohney, “Numerical study of reduced contact resistance via nanoscale topography at metal/semiconductor interfaces,” Semicond. Sci. Tech. 25, Article 015010 (2010).
  30. K. Sarpatwari, N. S. Dellas, O. O. Awadelkarim, and S. E. Mohney, “Extracting the Schottky barrier height from axial contacts to semiconductor nanowires,” Solid-State Electron. 7, 689–685 (2010).
  31. N. S. Dellas, J. Liang, B. J. Cooley, N. Samarth, and S. E. Mohney, “Electron microscopy of MnAs/GaAs core/shell nanowires,” Appl. Phys. Lett. 97, 072505 (2010).
  32. B. P. Downey, S. E. Mohney, T. E. Clark, and J. R. Flemish, “Reliability of aluminum-bearing ohmic contacts to SiC under high current density,” Microelectronics Reliability 50, 1967–1972 (2010).
  33. N. S. Dellas, S. Minassian, J. M. Redwing, and S. E. Mohney, “Formation of nickel germanide contacts to Ge nanowires,” Applied Physics Letters 97, Article 263116 (2010).
  34. K. Sarpatwari, S. E. Mohney, S. Ashok, and O. O. Awadelkarim, “Minority carrier injection limited current in Re/4H SiC Schottky diodes,” Phys. Status Solidi A 207, 1509–1513 (2010).
  35. A. V. Adedeji, A. C. Ahyi, J. R. Williams, S. E. Mohney, and J. D. Scofield, “Ambient temperature characterization of Schottky contacts on 4H-SiC aged in air at 350 °C,” Solid-State Electron. 7, 736–740 (2010).
  36. K. Sarpatwari, O. O. Awadelkarim, M. W. Allen, S. M. Durbin, and S. E. Mohney, “Extracting the Richardson Constant: IrOx/n-ZnO Schottky Diodes,” Applied Physics Letters 94, Article 242110 and “Erratum,” Article 059901 (2009).
  37. R. Dormaier, Q. Zhang, Y. C. Chou, M. D. Lange, Y. M. Yang, A. Oki, and S. E. Mohney, “Pd/Ru/Au Ohmic Contacts to InAlSb/InAs Heterostructures for High Electron Mobility Transistors,” Journal of Vacuum Science & Technology B, 27 2145–2152 (2009).
  38. M. W. Allen, X. Weng, J. M. Redwing, K. Sarpatwari, S. E. Mohney, H. von Wenckstern, and M. Grundmann, and S. M. Durbin, “Temperature-Dependent Properties of Nearly Ideal ZnO Schottky Diodes,” IEEE Transactions on Electron Devices 56, 2160­–2164 (2009).
  39. Y. Ke, X. J. Weng, J. M. Redwing, C. M. Eichfeld, T. R. Swisher, S. E. Mohney, and Y. M. Habib, “Fabrication and Electrical Properties of Si Nanowires by Al Catalyzed Vapor Liquid Solid Growth,” Nano Letters 9, 4494­–4499 (2009).
  40. R. Dormaier, Q. Zhang, B. Liu, Y. C. Chou, M. D. Lange, J. M. Yang, A. K. Oki, and S. E. Mohney, “Thermal Stability of Pd/Pt/Au Contacts to InAlAs/InAs Heterostructures for High Electron Mobility Transistors,” Journal of Applied Physics 105, Article 044505 (2009).
  41. B. J. Cooley, T. E. Clark, B. Z. Liu, C. M. Eichfeld, E. C. Dickey, S. E. Mohney, S. A. Crooker, and N. Samarth, “Growth of Magneto-optically Active (Zn, Mn)Se Nanowires,” Nano Letters 9, 3142–3146 (2009).
  42. Zhanao Tan, Ting Zhu, Fan Zhang, Shuai Gao, Chunfeng Zheng, Brittany Hendrick, Shawn Pickering, Jian Wu, Jian Xu, Hauipeng Su, Andrew Y. Wang, Nicholas S. Dellas, and Suzanne E. Mohney, “Colloidal Nanocrystal-Based Light-Emitting Diodes Fabricated on Plastic—Towards Flexible Quantum Dot Optoelectronics,” Journal of Applied Physics 105, Article 034312 (2009).
  43. A. M. Mohammad, A. M. Abdullah, B. E. El-Anadouli, and S. E. Mohney, “Template-Assisted Growth of Rhodium Nanowire Contacts to Silicon Nanowires,” International Journal of Nanomanufacturing 4, 146–158 (2009).
  44. N. S. Dellas, B. Z. Liu, S. M. Eichfeld, C. M. Eichfeld, T. S. Mayer, and S. E. Mohney, “Orientation Dependence of Nickel Silicide Formation in Contacts to Silicon Nanowires,” Journal of Applied Physics 105, Article 094309 (2009).
  45. B. P. Downey, J. R. Flemish, B. Z. Liu, T. E. Clark, and S. E. Mohney, “Current-Induced Degradation of Nickel Ohmic Contacts to SiC,” Journal of Electronic Materials 38, 563–568 (2009).
  46. S. C. Price, K. Shanmugasundaram, S. Ramani, T. Zhu, F. Zhang, J. Xu, S. E. Mohney, Q. Zhang, A. Kshirsagar, and J. Ruzyllo, “Studies of Mist Deposition for the Formation of Quantum Dot CdSe Films,” Semiconductor Science and Technology 24, Article 105024 (2009).
  47. A. Dimoulas, A. Toriumi, and S. E. Mohney, “Source and Drain Contacts for Germanium and III-V FETs for Digital Logic,” MRS Bulletin 34, 522–529 (2009).
  48. M. A. Miller, S.-K. Lin, and S. E. Mohney, “V/Al/V/Ag Contacts to n-GaN and n-AlGaN,” Journal of Applied Physics 104, Article 064508 (2008).
  49. J. Xu, C. Zhang, T. Zhu, F. Zhang, A. Cheng, Q. Zhang, S. E. Mohney, R. H. Henderson, and Y. A. Wang, “Two Photon Pumped Lasing from Colloidal Nanocrystal Quantum Dots,” Optics Letters 33, 2437–2439 (2008).
  50. N. S. Dellas, K. Meinert, Jr., and S. E. Mohney, “Laser-Enhanced Electroless Plating of Silver Seed Layers for Selective Electroless Copper Deposition,” Journal of Laser Applications 20, 218–223 (2008).
  51. T-t. Ho, Y. Wang, S. Eichfeld, K. K. Lew, B. Liu, S. E. Mohney, J. M. Redwing, and T. S. Mayer, “In-situ Axially-Doped n-Channel Silicon Nanowire Field Effect Transistors,” Nano Letters 8, 4359–4364 (2008).
  52. M. A. Miller and S. E. Mohney, “High and Low Temperature Behavior of Ohmic Contacts to AlGaN/GaN Heterostructures with a Thin GaN Cap,” Journal of Vacuum Science and Technology B 26, 1883–1886 (2008).
  53. E. M. Lyszcek and S. E. Mohney, “Selective Deposition of Ohmic Contacts to p-InGaAs by Electroless Plating,” Journal of the Electrochemical Society 155, H699­–H702 (2008).
  54. S. M. Woodruff, N. S. Dellas, B. Z. Liu, S. M. Eichfeld, T. S. Mayer, J. M. Redwing, and S. E. Mohney, “Nickel and Nickel Silicide Schottky Barrier Contacts to n-Type Silicon Nanowires,” Journal of Vacuum Science and Technology B 26, 1592–1596 (2008).
  55. M. A. Miller, B. H. Koo, K. H. A. Bogart, and S. E. Mohney, “Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-Al0.58Ga0.42N,” Journal of Electronic Materials 37, 564–568 (2008).
  56. B. Z. Liu, Y. F. Wang, T. T. Ho, K. K. Lew, S. M. Eichfeld, J. M. Redwing, T. S. Mayer, and S. E. Mohney, “Oxidation of Silicon Nanowires for Top-Gated Field Effect Transistors,” Journal of Vacuum Science and Technology A 26, 370–374 (2008).
  57. T. Zhu, K. Shanmugasundaram, S. C. Price, J. Ruzyllo, F. Zhang, J. Xu, S. E. Mohney, Q. Zhang, and J. R. Ruzyllo, “Mist Fabrication of Light Emitting Diodes with Colloidal Nanocrystal Quantum Dots,” Applied Physics Letters 92, Article 023111 (2008).
  58. M. A. Miller, S. K. Lin, and S. E. Mohney, “V/Al/V/Ag Contacts to n-GaN and n-AlGaN,” Journal of Applied Physics 104, Article 064508 (2008).
  59. Z. Tan, F. Zhang, T. Zhu, J. Xu, A. Y. Wang, J. D. Dixon, L. Li, Q. Zhang, S. E. Mohney, and J. Ruzyllo, “Bright and Color-Saturated Emission from Blue Light-Emitting Diodes Based on Solution-Processed Colloidal Nanocrystal Quantum Dots,” Nano Letters 7, 3803-3807 (2007).
  60. Z. Xu, J. H. Edgar, D. C. Look, S. Baumann, R. J. Bleiler, S. H. Wang, and S. E. Mohney, “The Effect of Si Doping on the Electrical Properties of B12As2 Thin Films on (0001) 6H-SiC Substrates,” Journal of Applied Physics 101, Article 053710 (2007).
  61. B. Z. Liu, Y. F. Wang, S. M. Dilts, T. S. Mayer, and S. E. Mohney, “Silicidation of Silicon Nanowire by Platinum,” Nano Letters 7, 818­–824 (2007).
  62. S. M. Eichfeld, T-T. Ho, C. M. Eichfeld, A. Cranmer, S. E. Mohney, T. S. Mayer and J. M. Redwing, “Resistivity Measurements of Intentionally and Unintentionally Template-Grown Doped Silicon Nanowire Arrays,” Nanotechnology 18, Article 315201 (2007).
  63. M. A. Miller and S. E. Mohney, “V/Al/V/Ag Ohmic Contacts to n-AlGaN/GaN Heterostructures with a Thin GaN Cap,” Applied Physics Letters 91, Article 012103 (2007).
  64. C. M. Eichfeld, C. Wood, B. Liu, S. Eichfeld, J. M. Redwing and S. E. Mohney, “Selective Plating for Junction Delineation in Silicon Nanowires,” Nano Letters 7, 3803–3807 (2007).
  65. M. A. Miller, S. E. Mohney, A. Nikiforov, G. S. Cargill III, and K. H. A. Bogart, “Ohmic Contacts to Plasma Etched n-Al0.58Ga0.42N,” Applied Physics Letters 89, Article No. 132114 (2006).
  66. D. Shir, B. Z. Liu, A. M. Mohammad, K. K. Lew, and S. E. Mohney, “Oxidation of Silicon Nanowires,” Journal of Vacuum Science and Technology B 24, 1333–1336 (2006).
  67. J. A. Robinson and S. E. Mohney, “Solid-State Phase Formation between Pd Thin Films and GaSb,” Journal of Electronic Materials 35, 48–55 (2006).
  68. S. H. Wang, E. M. Lysczek, B. Z. Liu, J. A. Robinson, and S. E. Mohney, “Shallow and Thermally Stable Ohmic Contacts to p-InAsP,” Journal of The Electrochemical Society 153, G479–482 (2006).
  69. J. A. Robinson, S. E. Mohney, J. B. Boos, B. P. Tinkham, and B. R. Bennett, “Pd/Pt/Au Ohmic Contact for AlSb/InAs0.7Sb0.3 Heterostructures,” Solid-State Electronics 50, 429–432 (2006).
  70. E. M. Lysczek, J. A. Robinson, and S. E. Mohney, “Ohmic Contacts to p-Type InAs,” Materials Science and Engineering B 134, 44–48 (2006).
  71. S. H. Wang, E. M. Lysczek, Bangzhi Liu, S. E. Mohney, Z. Xu, R. Nagarajan and J. H. Edgar, “Cr/Pt Ohmic Contacts to B12As2” Applied Physics Letters 87, 042103 (2005).
  72. S. E. Mohney, Y. Wang, M. A. Cabassi, K. K. Lew, S. Dey, J. M. Redwing and T. S. Mayer, “Measuring the Specific Contact Resistance of Contacts to Semiconductor Nanowires,” Solid State Electronics 49, 227 (2005).
  73. C. M. Eichfeld, M. A. Horsey, S. E. Mohney, A. V. Adedeji and J. S. Williams, “Ta-Ru-N Diffusion Barriers for High-Temperature Contacts to p-Type SiC,” Thin Solid Films 485, 207 (2005).
  74. T. E. Bogart, S. Dey, S. E. Mohney and J. M. Redwing, “Diameter-Controlled Synthesis of Silicon Nanowires Using Nanoporous Alumina Membranes,” Advanced Materials 17, 114 (2005).
  75. S. H. Wang, S. E. Mohney and J. A. Robinson, "Design of Thermally Gate Metallizations for AlGaAsSb/InAs HEMTs," Semiconductor Science and Technology 20, 755 (2005).
  76. E. D. Readinger, J. A. Robinson, S. E. Mohney and R. Therrien, “Thermal Stability of Metallizations on GaN/AlxGa1-xN/GaN Heterostructures,” Semiconductor Science and Technology 20, 389 (2005).
  77. S. H. Wang, J. A. Robinson, S. E. Mohney and B. R. Bennett, “Shallow and Thermally Stable Pt/W/Au Ohmic Contacts to p-Type InGaSb,” Journal of Vacuum Science and Technology A 23, 293 (2005).
  78. J. A. Robinson and S. E. Mohney, “A Low-Resistance, Thermally Stable Ohmic Contact to n-GaSb,” Journal of Applied Physics 98, 033703 (2005).
  79. E. D. Readinger and S. E. Mohney, “Environmental Sensitivity of Au Diodes on n-AlGaN,” Journal of Electronic Materials 34, 375 (2005).
  80. Gary L. Gray, Andrew J. Miller, Thomas J. Yurick, Jr. and Suzanne E. Mohney, “Educational Software for Materials Processing,” Journal of Materials Education 26, 321 (2004).
  81. J. A. Robinson and S. E. Mohney, “Characterization of Sulfur Passivated n-GaSb using Transmission Electron Microscopy and the Influence of Passivation on Ohmic Contact Resistance,” Journal of Applied Physics 96, 2684 (2004).
  82. B. A. Hull, S. E. Mohney, U. Chowdhury and R. D. Dupuis, “Compositional Shift in AlxGa1‑xN Beneath Annealed Metal Contacts,” Journal of Vacuum Science and Technology B 22, 654 (2004).
  83. S. H. Wang, S. E. Mohney, J. A. Robinson and B. R. Bennett, “Sulfur Passivation for Shallow Ohmic Contacts to p-InGaSb,” Applied Physics Letters 85, 3471 (2004).
  84. J. H. Wang, S. E. Mohney, S. H. Wang, U. Chowdhury and R. D. Dupuis, “Vanadium-Based Ohmic Contacts to n-Type Al0.6Ga0.4N,” Journal of Electronic Materials 33, 418 (2004).
  85. B. A. Hull, S. E. Mohney and Z. K. Liu, “Thermodynamic Modeling of the Ni-Al-Ga-N System,” Journal of Materials Research 19, 1742 (2004).
  86. B. A. Hull, S. E. Mohney, U. Chowdhury and R. D. Dupuis, “Ohmic Contacts to p-Type Al0.45Ga0.55N,” Journal of Applied Physics 96, 7325 (2004).
  87. J. A. Robinson and S. E. Mohney, “An Improved In-based Ohmic Contact to n-GaSb,” Solid-State Electronics 48, 1667 (2004).
  88. A. M. Mohammad, Soham Dey, K. K. Lew, J. M. Redwing, and S. E. Mohney, “Fabrication of Cobalt Silicide Nanowire Contacts to Silicon Nanowires,” Journal of the Electrochemical Society 150, G577–G580 (2003).
  89. Gaurav Sharma, C. M. Eichfeld, and S. E. Mohney, “Intermetallic Growth Between Lead Free Solders and Palladium,” Journal of Electronic Materials 32, 1209–1213 (2003).
  90. W. E. Liu and S. E. Mohney, “Condensed Phase Equilibria in Transition Metal-Ga-Sb System and Predictions for Thermally Stable Contacts to GaSb,” Journal of Electronic Materials 32, 1090–1098 (2003).
  91. S. H. Wang, S. E. Mohney, B. A. Hull, and B. R. Bennett, “Design of a Shallow, Thermally Stable Ohmic Contact to p-Type InGaSb,” Journal of Vacuum Science and Technology B 21, 633­–640 (2003).
  92. E. M. Lysczek, S. E. Mohney, and T. N. Wittberg, “Shallow Ohmic Contacts to p-Type InAs,” Electronics Letters 39, 1866­–1867 (2003).
  93. W. E. Liu and S. E. Mohney, “Condensed Phase Equilibria in Transition Metal-In-Sb Systems and Predictions for Thermally Stable Contacts to InSb,” Materials Science and Engineering B 103, 189­­­–201 (2003).
  94. E. D. Readinger, S. E. Mohney, T. G. Pribicko, J. H. Wang, K. O. Schweitz, U. Chowdhury, M. M. Wong, R. D. Dupuis, M. Pophristic, and S. P. Guo, “Ohmic Contacts to Al-rich n-AlGaN,” Electronics Letters 38, 1230–1231 (2002).
  95. S. H. Wang, S. E. Mohney, and R. Birkhahn, “Thermal and Environmental Aging of Au/Ni/p-GaN Contacts Annealed in Air,” Journal of Applied Physics 91, 3711–3716 (2002).
  96. K. O. Schweitz, P. K. Wang, S. E. Mohney, and D. Gotthold, “V/Al/Pt/Au Ohmic Contact to n‑AlGaN/GaN Heterostructures,” Applied Physics Letters 80, 1954–1956 (2002).
  97. S. E. Mohney, B. A. Hull, J. Y. Lin, and J. Crofton, “Morphological Study of the Al-Ti Ohmic Contact to p-Type SiC,” Solid-State Electronics 46, 689–693 (2002).
  98. J. Crofton, S. E. Mohney, J. R. Williams, and T. Isaacs-Smith, “Finding the Optimum Al-Ti Alloy Composition for Use as an Ohmic Contact to p-Type SiC,” Solid-State Electronics 46, 109–113 (2002).
  99. E. D. Readinger, B. P. Luther, S. E. Mohney, and E. L. Piner, “Environmental Aging of Schottky Contacts to n-AlGaN,” Journal of Applied Physics 89, 7983­–7987 (2001).
  100. T. J. Yurick, Jr., S. E. Mohney, and G. L. Gray, “Shape Memory Alloy Coils Optimized for Electrical Connectors,” IEEE Transactions on Components, Packaging, and Manufacturing Technology 24, 389–398 (2001).
  101. D. Auret, S. A. Goodman, G. Myburg, S. E. Mohney, and J. M. DeLucca, “Processing-Induced Electron Traps in n-type GaN,” Materials Science and Engineering B 82, 102­–104 (2001).
  102. K. O. Schweitz and S. E. Mohney, “Phase Equilibria in (Transition Metal)-Al-Ga-N Systems and Thermal Stability of Contacts to AlGaN,” Journal of Electronic Materials 30, 175–182 (2001) and “Erratum,” Journal of Electronic Materials 30, 445 (2001).
  103. J. M. DeLucca, S. E. Mohney, F. D. Auret, and S. A. Goodman, “Pt Schottky Contacts to n-GaN Formed by Electrodeposition and Physical Vapor Deposition,” Journal of Applied Physics 88, 2593–2600 (2000).
  104. Joon Seop Kwak, S. E. Mohney, Je-Yi Lin, and R. S. Kern, “Low Resistance Al/Ti/n-GaN Ohmic Contacts with Improved Surface Morphology and Thermal Stability,” Semiconductor Science and Technology 15, 756–760 (2000).
  105. S. D. Wolter, J. M. DeLucca, S. E. Mohney, R. S. Kern, and C. P. Kuo, “An Investigation into the Early Stages of Oxide Growth on Gallium Nitride,” Thin Solid Films 371, 153–160 (2000).
  106. B. A. Hull, S. E. Mohney, H. S. Venugopalan, and J. C. Ramer, “Influence of Oxygen on the Activation of p-Type GaN,” Applied Physics Letters 76, 2271­–2273 (2000).
  107. Igor Kulisic, Gary L. Gray, Thomas J. Yurick, Jr., and Suzanne E. Mohney, “Performance of a Shape Memory Alloy Coil-Shaped Clamp for Enhanced Normal Force in Pin-and-Receptacle Electrical Connectors,” IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A 23, 227–233 (2000).
  108. H. S. Venugopalan, S. E. Mohney, J. M. DeLucca, and R. J. Molnar, “Approaches to Designing Thermally Stable Schottky Contacts to n-GaN,” Semiconductor Science and Technology 14, 757–761 (1999).
  109. E. D. Readinger, S. D. Wolter, D. L. Waltemyer, J. M. DeLucca, S. E. Mohney, B. I. Prenitzer, L. A. Giannuzzi, and R. J. Molnar, “Wet Thermal Oxidation of GaN,” Journal of Electronic Materials 28, 257–260 (1999).
  110. S. D. Wolter, B. P. Luther, S. E. Mohney, R. F. Karlicek, Jr., and R. S. Kern, “Thermally Stable ZrN/Zr/n-GaN Ohmic Contacts,” Electrochemical and Solid-State Letters 2, 151–153 (1999).
  111. Y. Ren, M. Micovic, W. Z. Cai, S. Mohney, S. M. Lord, D. L. Miller, and T. S. Mayer, “Effect of In Situ Annealing on Highly-Mismatched In 0.75Ga0.25As on InP Grown Using Molecular Beam Epitaxy,” Journal of Electronic Materials 28, 887–893 (1999).
  112. B. P. Luther, S. D. Wolter, and S. E. Mohney, “High Temperature Pt Schottky Diode Gas Sensors on n-Type GaN,” Sensors and Actuators B56, 164–168 (1999).
  113. K. A. Whitmire and S. E. Mohney, “Phase Equilibria in the Semiconductor-Rich Portions of the Pt-Ti-Ga-As and Pt-Ti-In-As Systems,” Journal of Materials Science: Materials in Electronics 9, 357–360 (1998).
  114. B. P. Luther, S. E. Mohney, and T. N. Jackson, “Titanium and Titanium Nitride Contacts to n-Type Gallium Nitride,” Semiconductor Science and Technology 13, 1322–1327 (1998).
  115. H. S. Venugopalan, S. E. Mohney, J. M. DeLucca, B. P. Luther, and G. E. Bulman, “Morphology of Nickel and Nickel/Gold Contacts to Gallium Nitride,” Journal of Vacuum Science and Technology A 16, 607–610 (1998).
  116. S. D. Wolter, S. E. Mohney, H. Venugopalan, A. E. Wickenden, and D. D. Koleski, “Kinetic Study of the Oxidation of Gallium Nitride in Dry Air,” Journal of The Electrochemical Society 145, 629–632 (1998).
  117. T. N. Oder, J. R. Williams, S. E. Mohney, and J. Crofton, “Refractory Metal Boride Ohmic Contacts to p-type 6H-SiC,” Journal of Electronic Materials 27, 12–16 (1998).
  118. S. E. Mohney, “Condensed Phase Equilibria in the Metal-In-P Systems,” Journal of Electronic Materials 27, 24–29 (1998).
  119. H. S. Venugopalan and S. E. Mohney, “Thermally Stable Rhenium Schottky Barrier Contacts,” Applied Physics Letters 73, 12421244 (1998).
  120. E. Luckowski, J. M. DeLucca, J. R. Williams, S. E. Mohney, M. J. Bozack, T. Isaacs-Smith, and J. Crofton, “Improved Ohmic Contacts to n-Type 4H and 6H‑SiC using Nichrome,” Journal of Electronic Materials 27, 330–334 (1998).
  121. J. M. DeLucca, H. S. Venugopalan, S. E. Mohney, and R. F. Karlicek, Jr., “Ohmic Contacts Formed by Physical Vapor Deposition and Electrodeposition on p-GaN,” Applied Physics Letters 73, 3402–3404 (1998).
  122. T. N. Oder, J. R. Williams, M. J. Bozack, V. Iyer, S. E. Mohney, and J. Crofton “High Temperature Stability of Chromium Boride Ohmic Contacts to p‑Type 6H‑SiC,” Journal of Electronic Materials 27, 324–329 (1998).
  123. H. S. Venugopalan and S. E. Mohney, “Condensed Phase Equilibria in the Mo‑Ga‑N System at 800 °C,” Zeitschrift für Metallkunde 89, 184–186 (1998).
  124. B. P. Luther, S. E. Mohney, J. M. DeLucca, and R. F. Karlicek, Jr., “Study of Specific Contact Resistance, Mechanical Integrity, and Thermal Stability of Ti/Al and Ta/Al Ohmic Contacts to n-Type GaN,” Journal of Electronic Materials 27, 196–199 (1998).
  125. H. S. Venugopalan, S. E. Mohney, B. P. Luther, S. D. Wolter, and J. M. Redwing, “Interfacial Reactions between Nickel Thin Films and GaN,” Journal of Applied Physics 82, 650–654 (1997).
  126. Hagen Klauk, Steven L. Wright, Laura F. Palmateer, Suzanne E. Mohney, and Thomas N. Jackson, “Hydrogenated Amorphous SiGe Black Matrix Material for Active-Matrix Liquid-Crystal Displays,” Journal of the Society for Information Display 5, 393–397 (1997).
  127. J. Crofton, L. Beyer, J. R. Williams, E. D. Luckowski, S. E. Mohney, and J. M. DeLucca, “Aluminum-Titanium Ohmic Contacts to p-type SiC,” Solid State Electronics 41, 1725–1729 (1997).
  128. B. P. Luther, S. E. Mohney, T. N. Jackson, M. A. Khan, Q. Chen, and J. W. Wang, “Investigation of the Mechanism for Ohmic Contact Formation in Al and Ti/Al Contacts to n‑type GaN,” Applied Physics Letters 70, 57–59 (1997).
  129. S. D. Wolter, B. P. Luther, D. L. Waltemyer, C. Onneby, S. E. Mohney, and R. J. Molnar, “X-ray Photoelectron Spectroscopy and X-ray Diffraction Study of the Thermal Oxide on Gallium Nitride,” Applied Physics Letters 70, 2156–2158 (1997).
  130. S. E. Mohney, D. J. MacMahon, and K. L. Whitmire, “Condensed Phase Equilibria in the Cr-Ga-N System,” Materials Science and EngineeringB49, 152–154 (1997).
  131. B. P. Luther, J. M. DeLucca, S. E. Mohney, and R. F. Karlicek, Jr., “Analysis of a Thin Interfacial AlN Layer in Ti/Al and Pd/Al Ohmic Contacts to n‑GaN,” Applied Physics Letters 71, 3859–3861 (1997).
  132. S. E. Mohney and X. Lin, “Estimated Phase Equilibria in the Transition Metal-Ga-N Systems: Consequences for Electrical Contacts to GaN,” Journal of Electronic Materials 25, 811–818 (1996).
  133. S. E. Mohney and Y. A. Chang, “Phase Formation in Ni/InP Contacts,” Journal of Applied Physics 78, 1342–1347 (1995).
  134. C. F. Lin, S. E. Mohney, and Y. A. Chang, “Phase Equilibria in the Pt-In-P System,” Journal of Applied Physics 74, 4398–4402 (1993).
  135. S. E. Mohney and Y. A. Chang, “Interfacial Reactions in Pt/InP Contacts,” Journal of Applied Physics 74, 4403–4408 (1993).
  136. S. E. Mohney, C. F. Lin, and Y. A. Chang, “Phase Formation and Stability in the Pd/GaP System,” Applied Physics Letters 63, 1255–1257 (1993).
  137. S. E. Mohney and Y. A. Chang, “Solid Phase Equilibria in the In‑P‑Pd System,” Materials Science and Engineering B18, 94–99 (1993).
  138. S. E. Mohney and Y. A. Chang, “Phase Equilibria and Ternary Phase Formation in the In-Ni-P System,” Journal of Materials Research 7, 955–960 (1992).
  139. H. Guckel, J. J. Sniegowski, T. R. Christenson, S. E. Mohney, and T. F. Kelly, “Fabrication of Micromechanical Devices from Polysilicon Films with Smooth Surfaces,” Sensors and Actuators 20, 117–122 (1989).


Conference Proceedings

  1. A. Agrawal, J. Lin, B. Zheng, S. Sharma, S. Chopra, K. Wang, A. Gelatos, S. Mohney, and S. Datta, “Barrier height reduction to 0.15 eV and contact resistivity reduction to 9.1×10−9 Ω-cm2 using ultrathin TiO2−x interlayer between metal and silicon,” 2013 Symposium on VLSI Technology (IEEE, Piscataway, NJ) pp. T200–T201 (2013).
  2. A. Raghavan, T. A. Palmer, A. Domask, S. Mohney, E. W. Reutzel, and T. DebRoy, “Role of processing parameters on morphology, resistance and composition of laser fired contacts,” Proceedings of SPIE, Vol. 8826, DOI: 10.1117/12.2023978 (2013).
  3. Wenchong Hu, Bangzhi Liu, Nicholas S. Dellas, Sarah M. Eichfeld, Suzanne E. Mohney, Joan M. Redwing, and Theresa S. Mayer, “Lithography-free synthesis of freestanding gold nanoparticle arrays encapsulated within dielectric nanowires,” SPIE Proc. Vol. 7610, DOI: 10.1117/12.846766 (2010).
  4. A. Ali, H. Madan, R. Misra, E. Hwang, A. Agrawal, I. Ramirez, P. Schiffer, T. N. Jackson, S. E. Mohney, J. B. Boos1, B. R. Bennett1, I. Geppert, M. Eizenberg and S. Datta, “Advanced Composite High-κ Gate Stack for Mixed Anion Arsenide-Antimonide Quantum Well Transistors,” 2010 International Electron Device Meeting (IEDM), pp. 6.3.1–6.3.4 DOI: 10.1109/IEDM.2010.5703308 (2010).
  5. Steven C. Price, Steven C. Price, Karthik Shanmugasundaram, Ting Zhu, Fan Zhang, Jian Xu, Suzanne Mohney, Q. Zhang, and J. Ruzyllo, “Formation of Ultra-Thin Quantum Dot Films by Mist Deposition,” ECS Transactions 11(8) (2007) 89.
  6. Tsung-ta Ho, Yangfeng Wang, Bangzhi Liu, Sarah Eichfeld, K. K. Lew, Suzanne Mohney, Joan Redwing, and Theresa Mayer, “Top-Gated Field Effect Transistors Fabricated Using Thermally-Oxidized Silicon Nanowires Synthesized by Vapor-Liquid Solid Growth,” 2007 International Semiconductor Device Research Symposium DOI: 10.1109/ISDRS.2007.4422515 (2007), 1-2.
  7. S. E. Mohney, E. Lysczek, S. Wang and J. Robinson, “Ohmic Contacts to p-Type III-V Semiconductors for the Base of Heterojunction Bipolar Transistors,” ECS Transactions 5(3) (2006), 47–56.
  8. Nicholas Dellas, Kenneth Meinert, Brock Golesich, Suzanne Mohney, “Development of Laser-Based Techniques for Rapid Prototyping of Printed Wiring Boards,” Proc. International Congress on Applications of Lasers and Electro-Optics in LMP 18: Rapid Prototyping, Sintering and Powder Bed Technology (Laser Institute of America, Orlando, FL, 2006), 1801–1808.
  9. Yanfeng Wang, Tsung-Ta Ho, S. Dilts, Kok-Keong Lew, Bangzhi Liu, S. Mohney, J. Redwing and T. Mayer, “Inversion-mode Operation of Thermally-oxidized Modulation-doped Silicon Nanowire Field Effect Devices,” 64th Device Research Conference (IEEE, 2006) Digital Object Identifier 10.1109/DRC.2006.305172.
  10. Yanfeng Wang, Tsung-Ta Ho, S. Dilts, Kok-Keong Lew, Bangzhi Liu, S. Mohney, J. Redwing, T. Mayer, “Inversion-mode Operation of Thermally-oxidized Modulation-doped Silicon Nanowire Field Effect Devices, Proc. IEEE Device Research Conference, June 2006, 175–176.
  11. S. H. Wang, Owen Arnold, C. M. Eichfeld, S. E. Mohney, A. V. Adedeji, and J. R. Williams, “Tantalum-Ruthenium Diffusion Barriers for Contacts to SiC,” Materials Research Forum 527–529 (2006) 883–886.
  12. V. Adedeji, A. C. Ahyi, J. R. Williams, M. J. Bozack, S. E. Mohney, B. Liu and J. D. Scofield “Composite Ohmic Contacts to SiC,” Materials Research Forum 527–529 (2006), 879–882.
  13. Sarah M. Dilts, Ahmad Mohammad, Kok-Keong Lew, Joan M. Redwing and Suzanne E. Mohney, “Fabrication and Electrical Characterization of Silicon Nanowire Arrays,” (Mat. Res. Soc. Symp. Proc. 832, 2005) F9.10.
  14. R. Magno, J. B. Boos, P. M. Campbell, B. R. Bennett, E. R. Glaser, B. P. Tinkham, M. G. Ancona, K. D. Hobart, N. A. Papanicolaou, K. Ikossi, W. Kruppa, D. Park, B. V. Shanabrook, J. Mittereder, W. Chang, R. Bass, S. E. Mohney, S. Wang, J. Robinson, R. Tsai, M. Barsky, M. D. Lange, and A. Gutierrez, “Low-Power, High-Speed Sb-based HEMTs and HBTs,” in State of the Art Program on Compound Semiconductors CL and Narrow Bandgap Optoelectronic Materials and Devices II, ed. D. N. Buckley, W. K. Chan, P. C. Chang, K. Shiojima and P D. Fox (The Electrochemical Society Symposium Proceedings 2004-02, 2004), 191.
  15. S. E. Mohney, B. A. Hull and J. H. Wang, “ Contacts to Group III Nitride Semiconductors,” 2003 International Semiconductor Device Research Symposium (IEEE, 2003), Digital Object Identifier 10.1109/ISDRS.2003.1272153.
  16. R. Magno, J. B. Boos, P. M. Campbell, B. R. Bennett, E. R. Glaser, M. G. Ancona, B. P. Tinkham, D. Park, N. A. Papanicolaou, K. Ikossi, B. V. Shannabrook, and S. E. Mohney, “InAlAsSb/InGaSb double heterojunction bipolar transistor,” 2003 International Semiconductor Device Research Symposium (IEEE, 2003), Digital Object Identifier 10.1109/ ISDRS.2003.1272061.
  17. R. Magno, J. B. Boos, B. R. Bennett, K. Ikossi, E. R. Glaser, N. A. Papanicolaou, M. G. Ancona, B. P. Tinkham, W. Kruppa, D. Park, B. V. Shannabrook, J. Mittereder, W. Chang, K. D. Hobart, R. Bass, H. B. Dietrich, S. E. Mohney, S. Wang, J. Robinson, R. Tsai, M. Barsky, and A. Gutierrez, “High speed, low power electronics using Sb-based semiconductors,” International Symposium on Compound Semiconductors (IEEE, 2003), Digital Object Identifier 10.1109/ISCS.2003.1239962.
  18. S. E. Mohney, A. J. Miller, and G. L. Gray, “Software for Teaching Materials Processing and Diffusion,” JOM-e: http://www.tms.org/pubs/journals/JOM/0312/Mohney/Mohney-0312.html (2003).
  19. Brett A. Hull, Suzanne E. Mohney, Uttiya Chowdhury, Russell D. Dupuis, David Gotthold, Ronald Birkhahn, and Milan Pophristic, “Contacts to High Aluminum Fraction p-Type Aluminum Gallium Nitride,” in GaN and Related Alloys, ed. C. Wetzel, E. T. Yu, J. S. Speck, A. Rizzi, and Y. Arakawa (Materials Research Society Symposium Proceedings 743, 2002), L12.2.1– L12.2.6.
  20. J. Y. Lin, S. E. Mohney, M. Smalley, J. Crofton, J. R. Williams, and T. Isaacs-Smith, “Engineering the Al-Ti/p-SiC Ohmic Contact for Improved Performance,” in Silicon Carbide: Materials, Processes, and Device, ed. A. K. Agarwal, J. A. Cooper, Jr., E. Janzen, and M. Skowronski (Materials Research Society Symposium Proceedings 640, 2001), H7.3.1–H7.3.6.
  21. P. K. Wang, K. O. Schweitz, T. G. Pribicko, S. E. Mohney, M. Pophristic, D. Gotthold, “Ohmic contacts to n-type AlGaN and nitride HEMT epilayers,” 2001 International Semiconductor Device Research Symposium (IEEE, 2001), Digital Object Identifier 10.1109/ISDRS.2001.984474.
  22. K. O. Schweitz, T. G. Pribicko, S. E. Mohney, T. F. Isaacs-Smith, J. Williams, M. Pophristic, D. Gotthold, R. Birkhahn, and I. Ferguson, “The Influence of Contact Composition, Pretreatment, and Annealing Gas on the Ohmic Behavior of Ti/Al-Based Ohmic Contacts to n-Al0.4Ga0.6N,” in Wide Bandgap Electronics, ed. Thomas E. Kazior, Primit Parikh, Chanh Nguyen, Edward T. Yu (Materials Research Society Symposium Proceedings 680E, 2001), E6.2.1–E6.2.6.
  23. T. J. Yurick, Jr., S. E. Mohney, and G. L. Gray, Optimization of Shape Memory Alloys for Use in Electrical Connectors, in Proceedings of the 46th IEEE Holm Conference on Electrical Contacts (IEEE, Piscataway, NJ, 2000), 47­–59.
  24. E. D. Readinger, S. D. Wolter, and S. E. Mohney, “An Investigation of the Thermal Oxides on Gallium Nitride Grown Under Various Oxidizing Ambients,” in III‑V Nitride Materials and Processes, ed. T. D. Moustakas, S. E. Mohney, and S. J. Pearton (The Electrochemical Society Proceedings 98-18, 1999), 215–224.
  25. H. S. Venugopalan and S. E. Mohney, “Ni/Pt Ohmic Contacts to p-GaN,” in III‑V Nitride Materials and Processes, ed. T. D. Moustakas, S. E. Mohney, and S. J. Pearton (The Electrochemical Society Proceedings 98-18, 1999), 195–200.
  26. I. F. Kulisic, G. L. Gray, and S. E. Mohney, “Shape Memory Alloy Coil-Shaped Clamp for Enhanced Normal Force in Electrical Connectors, in Proceedings of the 44th IEEE Holm Conference on Electrical Contacts (IEEE, Piscataway, NJ, 1998), 20–25.
  27. H. S. Venugopalan and S. E. Mohney, “Thermally Stable Schottky Contacts to n-GaN,” in Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, ed. S. DenBaars, J. Palmour, M. Shur, and M. Spencer (Materials Research Society Symposium Proceedings 512, 1998), 279–283.
  28. Crofton, L. Beyer, T. Hogue, R. R. Siergiej, S. Mani, J. B. Cassidy, T. N. Oder, J. R. Williams, E. D. Luckowski, T. Isaacs-Smith, V. R. Iyer, and S. E. Mohney, “High Temperature Ohmic Contacts to p-Type SiC,” in 4th International High Temperature Electronics Conference (IEEE, Piscataway, NJ, 1998), 84–87.
  29. S. E. Mohney, B. P. Luther, and S. D. Wolter, “TiN and ZrN Based Ohmic Contacts to n-GaN,” in 4th International High Temperature Electronics Conference (IEEE, Piscataway, NJ, 1998), 134–137.
  30. Y. A. Chang, F.-Y. Shiau, S.-L. Chen, and S. Mohney, “Thermodynamic Considerations in the Rationalization of Solid-State Amorphization between Metals and III-V Semiconductors,” in Thermodynamics of Alloy Formation, ed. Y. A. Chang (TMS, Warrendale, PA, 1997), 187–198.
  31. S. E. Mohney, H. S. Venugopalan, and B. P. Luther, “Phase Equilibria in Transition Metal-Ga-N Systems: Experimental Determinations and Consequences for Electrical Contacts to GaN,” in High Temperature Materials Chemistry, ed. K. E. Spear (The Electrochemical Society Proceedings 97-39, 1997), 101–108.
  32. S. D. Wolter, S. E. Mohney, H. Venugopalan, D. L. Waltemyer, B. P. Luther, “Growth and Characterization of Thermal Oxides on Gallium Nitride,” in Gallium Nitride and Related Materials II, ed. C. R. Abernathy, H. Amano, and J. C. Zolper (Materials Research Society Symposium Proceedings 468, 1997), 495–500.
  33. H. S. Venugopalan, S. E. Mohney, B. P. Luther, S. D. Wolter, J. M. Redwing, G. E. Bulman, “Phase Formation and Morphology in Nickel and Nickel/Gold Contacts to Gallium Nitride,” in Gallium Nitride and Related Materials II, ed. C. R. Abernathy, H. Amano, and J. C. Zolper (Materials Research Society Symposium Proceedings 468, 1997), 431–436.
  34. B. P. Luther, S. E. Mohney, T. N. Jackson, M. A. Khan, Q. Chen, and J. W. Wang, “Investigation of Aluminum and Titanium/Aluminum Contacts to n-Type Gallium Nitride,” in III-V Nitrides, ed. F. A. Ponce, T. D. Moustakas, I. Akasaki, and B. A. Monemar (Materials Research Society Symposium Proceedings 449, 1997), 1097–1102.
  35. S. D. Wolter, B. P. Luther, D. L. Waltemyer, H. S. Venugopalan, and S. E. Mohney, “Oxidation of Gallium Nitride,” in High Temperature Materials Chemistry, ed. K. E. Spear (The Electrochemical Society Proceedings 97-39, 1997), 847–853.
  36. S. E. Mohney, B. P. Luther, T. N. Jackson, and M. A. Khan, “Metallurgical Study of Contacts to Gallium Nitride,” in Gallium Nitride and Related Materials, ed. R. D. Dupuis, F. A. Ponce, S. Nakamura, and J. A. Edmond (Materials Research Society Symposium Proceedings 395, 1996), 843–848.
  37. S. E. Mohney, “Investigation of the Metal-Ga-N Phase Equilibria: Use of Nitrogen Stability Diagrams,” in III-V Nitride Materials and Processes, ed. T. D. Moustakas, J. P. Dismukes, and S. J. Pearton (The Electrochemical Society Proceedings 96-11, 1996), 129–132.
  38. J. M. DeLucca and S. E. Mohney, “Approach to High Temperature Contacts to Silicon Carbide,” in III-N Nitride, SiC and Diamond Materials for Electronic Devices, ed. D. K. Gaskill, C. Brandt, and R. J. Nemanich (Materials Research Society Symposium Proceedings 423, 1996), 137–142.
  39. S. E. Mohney and Y. A. Chang, “Interfacial Reactions and Phase Stability in Ni/InP Contacts,” in Advanced Metallization and Processing for Semiconductor Devices and Circuits: Science, Technology, and Manufacturability–III, ed. S. P. Murarka, K. N. Tu, A. Katz, and K. Maex (Materials Research Society Symposium Proceedings 337, 1994), 393–398.
  40. S. E. Mohney and Y. A. Chang, “Phase Equilibria in the Metal-In-P Ternary Systems and Their Application to the Design of Metal Contacts to InP,” in Advanced Metallization and Processing for Semiconductor Device and Circuits–II, ed. A. Katz, Y. I. Nissim, S. P. Murarka, and J. M. E. Harper (Materials Research Society Symposium Proceedings 260, 1992), 519–524.

 

Patents

  1. Light Emitting Diodes With Quantum Dot Phosphors
    F. Zhang, J. Xu, S. Mohney
    US Patent 20,150,021,549


mohney@ems.psu.edu
© Suzanne Mohney 2015