
Suliman, Samia A.
Teaching Professor
Office phone: (814) 863-3574
Office address: 407C Earth and Engineering Sciences Building
Office hours:
Office hours location: 407B EES Building
Office hours phone: (814) 863-3574
E-mail: sas178@psu.edu
Educational Background
- Ph.D. (Honors), Engineering Science, Penn State University, 2002
- M.Eng., Electrical Engineering, Southern Illinois University, 1995
- M.Sc., Solid State Physics, Khartoum University, 1985
- B.S. (honors), Physics, Imperial College-London, 1981
Years of Service with Penn State
- June 2004 – Present Assistant Professor
- Jan 2002 – May 2004 Instructor
Recent Principal Publications
- Jifa Hao, R Rioux, Samia A. Suliman, and Osama Osman Awadelkarim (Feb 2014) “High Temperature Bias-Stress Induced Instability in Power Trench-Gated MOSFET Transistor,” Microelectronics Reliability, 54, pp. 374–380.
- Samia A. Suliman (2013) “Nanoscale Trench-Gated Silicon Power Transistor: Operation, Performance and Reliability Analysis,” in proceedings Nanoscale Trench-Gated Silicon Power Transistor: Operation, Performance and Reliability Analysis, Conference presentation, OMINTEC- May 2013- Jeddah - Saudi Arabia..
- Samia A. Suliman, Cliff Lissenden, and Christine Masters (2011) ““Supplemental learning tools for Statics and Strength of Materialsâ€,” in proceedings S. A. Suliman, Christine Master, Cliff Lisseneden, 118th ASEE annual conference, Vancouver..
- Samia A. Suliman, Karthik Sarpatwari, Osama Osman Awadelkarim, and Lucas Passmore (2007) “Analysis of Current-Voltage-Temperature Characteristics in SiC Schottky Diodes Using Threshold-Accepting Simulated-Annealing Techniques,,” Solid State Elecronics, 51, pp. 644–649.
- Lucas Passmore, Karthik Sarpatwari, Samia A. Suliman, and Osama Osman Awadelkarim (May 2006) “Fowler-Nordheim and Hot Carrier Reliabilities of U-Shaped Trench-Gated Transistors Studied by Three Terminal Charge Pumping,” Thin Solid Films, 504(1–2), pp. 302–306.
- Lucas Passmore, Karthik Sarpatwari, Samia A. Suliman, and Osama Osman Awadelkarim (Sept 2005) “Modified three-terminal charge-pumping technique applied to vertical transistor structures,” Journal of Vacuum Science and Technology, 5(B 23), pp. 2189–2193.
- Samia A. Suliman, Osama Osman Awadelkarim, Rodney Ridley, and Gary Dolny (Apr 2004) “Gate-oxide grown on the sidewalls and base of U-shaped Si trench: Effects of the oxide and oxide /Si interface condition on the properties of vertical MOS devices,” Microelectronics Engineering, 72(1–4), pp. 247–252.
- Samia A. Suliman, Rodney Ridley, Gary Dolny, Osama Osman Awadelkarim, and Stephen J. Fonash (2003) “Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitor: The impact of polycrystalline Si doping and oxide composition,” Solid State Electronics, 47, pp. 899–905.
- Samia A. Suliman, Osama Osman Awadelkarim, and Stephen J. Fonash (2002) “Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench,” Solid State Electronics, 46, pp. 837–845.
- Samia A. Suliman, Osama Osman Awadelkarim, and Stephen J. Fonash (2001) “The effects of channel boron-doping on the performance and reliability of N-channel trench UMOSFETs,” Solid State Electronics, 45, pp. 655–661.
Consulting, Patents, and Scientific and Professional Society Memberships
- ASEE, Member (2002 – Present)
- IEEE, Member (2002 – Present)
- NSBE, Member (2002 – Present)
- Royal College of Science (British), Associate member (1981 – Present)
Honors and Awards
- Weiss Graduate Fellow, Weiss Family-Penn State (1999)
- Associate: British Royal Collage of Science, Royal College of Science (Aug 1981)
Recent Institutional and Professional Service
- Active Faculty, NSBE-Penn State (2002 – Present)
- Panelist, NSF-GRFP (2002 – Present)
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