Growing Si Nanowires
NW growth by extrusion approach
Self-positioned Nanowires offer easy subsequent fabrication.
As grown, NW’s are positioned, oriented, and ready for subsequent processing into sensor devices, transistors, field emission tips.
New Transistor Structure
Proposed, demonstrated, and now further developing the new AMOSFET transistor concept.
This new device concept shows excellent transistor characteristics (Applied Phys. Lett., in press) <style float-left></style>
Mercury Nanowire Sensors
<style left>Due to high surface to volume ratio of nano-scale, devices are more sensitive than thin film versions.
Fonash Group 2007</style>