“Defect Chemistry and electronic transport in low-kappa dielectrics studied with electrically detected magnetic resonance”, Mutch, M.J.(1), Lenahan, P.M.(1), King, S.W.(2), (1) Pennsylvania State Univ., University Park, PA, United States; (2) Intel Corp., Hillsboro, OR, United, Journal of Applied Physics, v 119, n 9, 94102 (8 pp.) 7 March 2016

“Acceptor-oxygen vacancy defect dipoles and fully coordinated defect centers in a ferroelectric perovskite lattice: Electron paramagnetic resonance analysis of Mn2+ in single crystal BaTiO3”, Maier, R.A.(1); Pomorski, T.A.(1); Lenahan, P.M.(1); Randall, C.A.(1),(1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 118, n 16, 164102 (9 pp.) 28 Oct. 2015

“Negative bias instability in 4H-SiC MOSFETS: evidence for structural changes in the SiC”, Anders, M.A.(1); Lenahan, P.M.(1); Lelis, A.J.(2),(1) Dept. of Eng. Sci. & Mech., Penn State Univ., University Park, PA, United States; (2) Power Components Branch, US Army Res. Lab., Adelphi, MD, United States, 2015 IEEE International Reliability Physics Symposium (IRPS), 978-1-4673-7362-3, 3E.4.1-5 2015

“Relationship Between the 4H-SiC/SiO2 Interface Structure and Electronic Properties Explored by Electrically Detected Magnetic Resonance”, Anders, M.A.(1); Lenahan, P.M.(1); Cochrane, C.J.(2); Lelis, A.J.(3),(1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States; (2) Pennsylvania State Univ., University Park, PA, United States; (3) U.S. Army Res. Lab., Adelphi, MD, United States, IEEE Transactions on Electron Devices, v 62, n 2, 301-8 Feb. 2015

“High, Low, and Zero Field Spin Dependent Recombination in 4H SiC Metal Oxide Semiconductor Field Effect and Bipolar Junction Transistors”, Lenahan, P.M.(1); Cochrane, C.J.(1); Lelis, A.J.(2),(1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States; (2) U.S. Army Res. Lab., Adelphi, MD, United States, ECS Transactions, v 64, n 7, 111-22 2014

“Electrically detected magnetic resonance study of NBTI in 4H-SiC MOSFETs”, Anders, M.A.(1); Lenahan, P.M.(1); Follman, J.(1); Arthur, S.D.(2); McMahon, J.(2); Yu, L.(2); Zhu, X.(2); Lelis, A.J.(3),(1) Eng. Sci. & Mech., Pennsylvania State Univ., University Park, MD, United States; (2) Global Res., Gen. Electr., Niskayuna, NY, United States; (3) U.S. Army Res. Lab., Adelphi, MD, United States, 2014 IEEE International Integrated Reliability Workshop (IIRW). Final Report, 978-1-4799-7274-6, 16-19 2014

“Defect structure and electronic properties of SiOC:H films used for back end of line dielectrics”, Pomorski, T.A.(1); Bittel, B.C.(1); Lenahan, P.M.(1); Mays, E.(2); Ege, C.(2); Bielefeld, J.(2); Michalak, D.(2); King, S.W.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Intel Corp., Hillsboro, OR, United States, Journal of Applied Physics, v 115, n 23, 234508 (20 pp.) 21 June 2014

“Spin counting in electrically detected magnetic resonance via low-field defect state mixing”, Cochrane, C.J.(1); Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 104, n 9, 093503 (5 pp.) 3 March 2014

“Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB”, Cochrane, C.J.(1); Lenahan, P.M.(1),(1) Eng. Sci., Pennsylvania State Univ., University Park, PA, United States, 2013 IEEE International Integrated Reliability Workshop. Final Report, 978-1-4799-0352-8, 88-9 2013

“Electron paramagnetic resonance as a probe of technologically relevant processing effects on CdTe solar cell materials”, Pigott, M.(1); Young, L.(1); Lenahan, P.M.(1); Halverson, A.(2); Andreini, K.W.(2); Korevaar, B.A.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) G.E. Global Res., Niskayuna, NY, United States, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 978-1-4799-3299-3, 0635-8 2013

“Interface defects and negative bias temperature instabilities in 4H-SiC PMOSFETs: a combined DCIV/SDR study”, Aichinger, T.(1); Lenahan, P.M.(1); Peters, D.(2),(1) Dept. of ESM, Pennsylvania State Univ., University Park, PA, United States; (2) Infineon Technol. AG, Erlangen, Germany, Materials Science Forum, v 740-742, 529-32 2013

“Theory of hyperfine active nitrogen complexes observed in 4H-SiC diodes”, Tuttle, B.R.(2); Aichinger, T.(1); Lenahan, P.M.(1); Pantelides, S.T.(2),(1) Dept. of Eng. Sci., Pennsylvania State Univ., University Park, PA, United States; (2) Dept. of Phys. & Astron., Vanderbilt Univ., Nashville, TN, United States, Journal of Applied Physics, v 114, n 11, 113712 (4 pp.) 21 Sept. 2013

“Defects and electronic transport in hydrogenated amorphous SiC films of interest for low dielectric constant back end of the line dielectric systems”, Pomorski, T.A.(1); Bittel, B.C.(1); Cochrane, C.J.(1); Lenahan, P.M.(1); Bielefeld, J.(2); King, S.W.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Intel Corp., Hillsboro, OR, United States, Journal of Applied Physics, v 114, n 7, 074501 (10 pp.) 21 Aug. 2013

“Detection of interfacial Pb centers in Si/SiO2 metal-oxide-semiconducting field-effect transistors via zero-field spin dependent recombination with observation of precursor pair spin-spin interactions”, Cochrane, C.J.(1); Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 103, n 5, 053506 (5 pp.) 29 July 2013

“The effect of nitric oxide anneals on silicon vacancies at and very near the interface of 4H SiC metal oxide semiconducting field effect transistors using electrically detected magnetic resonance”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.J.(2),(1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States; (2) US Army Res. Lab., Adelphi, MD, United States, Applied Physics Letters, v 102, n 19, 193507 (4 pp.) 13 May 2013

“A means to study reliability based defects in fully processed devices utilizing zero-field spin dependent transport”, Cochrane, C.J.(1); Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, 2012 IEEE International Integrated Reliability Workshop (IIRW 2012), 978-1-4673-2749-7, 45-7 2012

“Definitive identification of an important 4H SiC MOSFET interface/near interface trap”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.J.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) U.S. Army Res. Lab., Adelphi, MD, United States, Materials Science Forum, v 717-720, pt.1, 433-6 2012

“Zero-field detection of spin dependent recombination with direct observation of electron nuclear hyperfine interactions in the absence of an oscillating electromagnetic field”, Cochrane, C.J.(1); Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 112, n 12, 123714 (6 pp.) 15 Dec. 2012

“Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect”, Aichinger, T.(1); Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 101, n 8, 083504 (5 pp.) 20 Aug. 2012

“Evidence for Pb center-hydrogen complexes after subjecting PMOS devices to NBTI stress - a combined DCIV/SDR study”, Aichinger, T.(1); Lenahan, P.M.(1); Grasser, T.(2); Pobegen, G.(3); Nelhiebel, M.(4),(1) Semicond. Spectrosc. Lab., Pennsylvania State Univ., State College, PA, United States; (2) Inst. for Microelectron., Tech. Univ. of Vienna, Vienna, Austria; (3) Kompetenzzentrum Automobil- und Industrieelektron. (KAI), Villach, Austria; (4) Infineon Technol. Austria, Villach, Austria, 2012 IEEE International Reliability Physics Symposium (IRPS), 978-1-4577-1678-2, XT.2.1-6 2012

“A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions-A spin dependent recombination study”, Aichinger, T.(1); Lenahan, P.M.(1); Tuttle, B.R.(2); Peters, D.(3),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Pennsylvania State Univ., Erie, PA, United States; (3) Infineon Technol. AG, Erlangen, Germany, Applied Physics Letters, v 100, n 11, 112113 (4 pp.) 12 March 2012

“Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.J.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) US Army Res. Lab., Adelphi, MD, United States, Applied Physics Letters, v 100, n 2, 023509 (3 pp.) 9 Jan. 2012

“Electron paramagnetic resonance studies of interlayer dielectrics”, Bittel, B.C.(1); Pomorski, T.A.(1); Lenahan, P.M.(1); King, S.(2); Mays, E.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Intel Corp., University Park, PA, United States, 2011 IEEE International Integrated Reliability Workshop (IIRW), 978-1-4577-0113-9, 50-4 2011

“Spin dependent charge pumping: A new tool for reliability studies”, Bittel, B.C.(1); Lenahan, P.M.(1); Ryan, J.T.(2); Fronheiser, J.(3); Lelis, A.J.(4),(1) Pennsylvania State Univ., University Park, PA, United States; (2) NIST, University Park, PA, United States; (3) GE Global Res., University Park, PA, United States; (4) US Army Res. Lab., University Park, PA, United States, 2011 IEEE International Integrated Reliability Workshop (IIRW), 978-1-4577-0113-9, 142-5 2011

“Spin dependent charge pumping: A new tool for MOS interface characterization”, Bittel, B.C.(1); Lenahan, P.M.(1); Ryan, J.T.(2); Fronheiser, J.(3); Lelis, A.J.(4),(1) Pennsylvania State Univ., University Park, PA, United States; (2) NIST, Gaithersburg, MD, United States; (3) GE Global Res., Niskayuna, NY, United States; (4) US Army Res. Lab., Adelphi, MD, United States, 2011 International Semiconductor Device Research Symposium (ISDRS 2011), 978-1-4577-1755-0, 2 pp. 2011

“Electrically detected magnetic resonance study of a near interface trap in 4H SiC MOSFETs”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) US Army Res. Lab., Adelphi, MD, United States, 2011 International Semiconductor Device Research Symposium (ISDRS 2011), 978-1-4577-1755-0, 2 pp. 2011

“Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors”, Bittel, B.C.(1); Lenahan, P.M.(1); Ryan, J.T.(2); Fronheiser, J.(3); Lelis, A.J.(4),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Semicond. Electron. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, United States; (3) GE Global Res., Niskayuna, NY, United States; (4) US Army Res. Lab., Adelphi, MD, United States, Applied Physics Letters, v 99, n 8, 083504 (3 pp.) 22 Aug. 2011

“A model for NBTI in nitrided oxide MOSFETs which does not involve hydrogen or diffusion”, Lenahan, P.M.(1); Campbell, J.P.(2); Krishnan, A.T.(3); Krishnan, S.(3),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Nat. Inst. of Stand. & Technol., Gaithersburg, MD, United States; (3) Texas Instrum. Inc., Dallas, TX, United States, IEEE Transactions on Device and Materials Reliability, v 11, n 2, 219-26 June 2011

“An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.J.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) US Army Res. Lab., Adelphi, MD, United States, Journal of Applied Physics, v 109, n 1, 014506 (12 pp.) 1 Jan. 2011

“Color center formation in vacuum sintered Nd3xY3-3xAl5O12 transparent ceramics”, Stevenson, A.J.(1); Bittel, B.C.(1); Leh, C.G.(1); Xin Li(1); Dickey, E.C.(1); Lenahan, P.M.(2); Messing, G.L.(1),(1) Dept. of Mater. Sci. & Eng., Pennsylvania State Univ., University Park, PA, United States; (2) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 98, n 5, 051906 (3 pp.) 31 Jan. 2011

“Defects in low-κ dielectrics and etch stop layers for use as interlayer dielectrics in ULSI”, Bittel, B.C.(1); Pomorski, T.A.(1); Lenahan, P.M.(1); King, S.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Intel Corp., PA, United States, 2010 IEEE International Integrated Reliability Workshop Final Report (IIRW 2010), 978-1-4244-8521-5, 37-41 2010

“Spin dependent tunneling spectroscopy in 1.2 nm dielectrics”, Ryan, J.T.(1); Lenahan, P.M.(1); Krishnan, A.T.(2); Krishnan, S.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Texas Instrum., Dallas, TX, United States, Journal of Applied Physics, v 108, n 6, 064511 (6 pp.) 15 Sept. 2010

“Reliability and Performance Limiting Defects in Low-κ Dielectrics for use as Interlayer Dielectrics”, Bittel, B.C.(1); Lenahan, P.M.(1); King, S.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Intel Corp., CA, United States, 2010 IEEE International Reliability Physics Symposium (IRPS 2010), 978-1-4244-5430-3, 947-50 2010

“Energy resolved spin dependent trap assisted tunneling investigation of SILC related defects”, Ryan, J.T.(1); Lenahan, P.M.(1); Krishnan, A.T.; Krishnan, S.,(1) Pennsylvania State Univ., University Park, PA, United States, 2010 IEEE International Reliability Physics Symposium (IRPS 2010), 978-1-4244-5430-3, 1122-5 2010

“Recovery-free electron spin resonance observations of NBTI degradation”, Ryan, J.T.(1); Lenahan, P.M.(1); Grasser, T.(2); Enichlmair, H.(3),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Inst. for Microelectron., Tech. Univ. of Vienna, Vienna, Austria; (3) Austriamicrosystems AG, Unterpremstaetten, Austria, 2010 IEEE International Reliability Physics Symposium (IRPS 2010), 978-1-4244-5430-3, 43-9 2010

“A model for NBTI in nitrided oxide MOSFETs without hydrogen or diffusion”, Lenahan, P.M.(1),(1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, 2010 IEEE International Reliability Physics Symposium (IRPS 2010), 978-1-4244-5430-3, 1086-90 2010

“Ultraviolet radiation effects on paramagnetic defects in low-κ dielectrics for ultralarge scale integrated circuit interconnects”, Bittel, B.C.(1); Lenahan, P.M.(1); King, S.W.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Intel Corp., Hillsboro, OR, United States, Applied Physics Letters, v 97, n 6, 063506 (3 pp.) 9 Aug. 2010

“Observations of negative bias temperature instability defect generation via on the fly electron spin resonance”, Ryan, J.T.(1); Lenahan, P.M.(1); Grasser, T.(2); Enichlmair, H.(3),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Tech. Univ. of Vienna, Vienna, Austria; (3) Schloss Premstaetten, Austriamicrosystems AG, Unterpremstaetten, Austria, Applied Physics Letters, v 96, n 22, 223509 (3 pp.) 31 May 2010

“EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors”, Cochrane, C.J.(1); Bittel, B.C.(1); Lenahan, P.M.(1); Fronheiser, J.(2); Matocha, K.(2); Lelis, A.(3),(1) Pennsylvania State Univ., University Park, PA, United States; (2) GE Global Res., Niskayuna, NY, United States; (3) US Army Res. Lab., Adelphi, MD, United States, Materials Science Forum, v 645-648, pt.1, 527-30 2009

“What triggers NBTI? An “on the fly” electron spin resonance approach”, Ryan, J.T.(1); Lenahan, P.M.(1); Grasser, T.(2); Enichlmair, H.(3),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Inst. for Microelectron., Tech. Univ. of Vienna, Vienna, Austria; (3) Austriamicrosystems AG, Unterpremstaetten, Austria, 2009 IEEE International Integrated Reliability Workshop Final Report (IRW 2009), 978-1-4244-3921-8, 42-5 2009

“Investigation of SILC via energy resolved spin dependent tunneling spectroscopy”, Ryan, J.T.(1); Lenahan, P.M.(1); Krishnan, A.T.(2); Krishnan, S.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Texas Instrum., Dallas, TX, United States, 2009 IEEE International Integrated Reliability Workshop Final Report (IRW 2009), 978-1-4244-3921-8, 1-4 2009

“A radically different model for NBTI in nitrided oxide MOSFETs”, Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, 2009 IEEE International Integrated Reliability Workshop Final Report (IRW 2009), 978-1-4244-3921-8, 90-2 2009

“Investigation of SILC via energy resolved spin dependent tunneling spectroscopy”, Ryan, J.T.(1); Lenahan, P.M.(1); Krishnan, A.(2); Krishnan, S.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Texas Instrum., Dallas, TX, United States, 2009 International Semiconductor Device Research Symposium (ISDRS 2009), 978-1-4244-6030-4, 2 pp. 2009

“What triggers NBTI? An “on the fly” electron spin resonance approach”, Ryan, J.T.(1); Lenahan, P.M.(1); Grasser, T.(2); Enichlmair, H.(3),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Tech. Univ. of Vienna, Vienna, Austria; (3) AustriamicroSyst. AG, Unterpremstatten, Austria, 2009 International Semiconductor Device Research Symposium (ISDRS 2009), 978-1-4244-6030-4, 2 pp. 2009

“Energy resolved spin dependent tunneling in 1.2 nm dielectrics”, Ryan, J.T.(1); Lenahan, P.M.(1); Krishnan, A.T.(2); Krishnan, S.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Texas Instrum., Dallas, TX, United States, Applied Physics Letters, v 95, n 10, 103503 (3 pp.) 7 Sept. 2009

“Spin dependent recombination study of the atomic-scale effects of fluorine on the negative bias temperature instability”, Ryan, J.T.(1); Lenahan, P.M.(1); Krishnan, A.T.(2); Krishnan, S.(2); Campbell, J.P.(3),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Texas Instrum., Dallas, TX, United States; (3) Semicond. Electron. Div., NIST, Gaithersburg, MD, United States, 2009 IEEE International Reliability Physics Symposium (IRPS), 978-1-4244-2889-2, 988-91 2009

“Electrically detected magnetic resonance studies of processing variations in 4H SiC based MOSFETs”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.J.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) US Army Res. Lab., Adelphi, MD, United States, Materials Science Forum, v 600-603, pt.2, 719-22 2009

“Direct observation of lifetime killing defects in 4H SiC epitaxial layers through spin dependent recombination in bipolar junction transistors”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.J.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) US Army Res. Lab., Adelphi, MD, United States, Journal of Applied Physics, v 105, n 6, 064502 (7 pp.) 15 March 2009

“An electrically-detected magnetic resonance study of the atomic-scale effects of fluorine on the negative bias temperature instability”, Ryan, J.T.(1); Lenahan, P.M.(1); Krishnan, A.T.(2); Krishnan, S.(2); Campbell, J.P.(3),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Texas Instrum., Dallas, TX, United States; (3) NIST, Gaithersburg, MD, United States, IRW 2008. IEEE International Integrated Reliability Workshop Final Report, 978-1-4244-2194-7, 137-40 2008

“Interface traps in silicon carbide MOSFETs”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.J.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) US Army Res. Lab., Adelphi, MD, United States, IRW 2008. IEEE International Integrated Reliability Workshop Final Report, 978-1-4244-2194-7, 68-71 2008

“Real time exponentially weighted recursive least squares adaptive signal averaging for enhancing the sensitivity of continuous wave magnetic resonance”, Cochrane, C.J.(1); Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, Journal of Magnetic Resonance, v 195, n 1, 17-22 Nov. 2008

“Interfacial layer defects and instabilities in HfO2 MOS structures”, Ryan, J.T.(1); Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, 2008 IEEE International Reliability Physics Symposium (IRPS), 978-1-4244-2049-0, 665-6 2008

“Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based metal-oxide-silicon field-effect transistors”, Ryan, J.T.(1); Lenahan, P.M.(1); Robertson, J.; Bersuker, G.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 92, n 12, 123506-1-3 24 March 2008

“Identification of the atomic-scale defects involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors”, Campbell, J.P.(1); Lenahan, P.M.; Krishnan, A.T.; Krishnan, S.,(1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 103, n 4, 044505-1-11 15 Feb. 2008

“Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based MOSFETs”, Ryan, J.T.(1); Lenahan, P.M.,(1) Pennsylvania State Univ., University Park, PA, United States, 2007 IEEE International Integrated Reliability Workshop. Final Report, 978-1-4244-1171-9, 107-10 2007

“Atomic-scale defects involved in NBTI in plasma-nitrided PMOSFETS”, Campbell, J.P.(1); Lenahan, P.M.(1); Krishnan, A.T.; Krishnan, S.,(1) Perm State Univ., University Park, PA, United States, 2007 IEEE International Integrated Reliability Workshop. Final Report, 978-1-4244-1171-9, 12-17 2007

“Detection of atomic scale defects in MOS reliability”, Lenahan, P.M.(1),(1) Pennsylvania State Univ., Pennsylvania, PA, United States, 2007 IEEE International Integrated Reliability Workshop. Final Report, 978-1-4244-1171-9, 162 2007

“Atomic scale defects in 4H SiC/SiO2 using electron spin resonance”, Rape, A.(1); Lenahan, P.M.(1); Lelis, A.J.,(1) Pennsylvania State Univ., University Park, PA, United States, International Semiconductor Device Research Symposium, 978-1-4244-1891-6, 7-8 2007

“Electrically detected magnetic resonance studies of processing variations in 4H SiC based MOSFETs”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.J.,(1) Dept. ESM, Pennsylvania State Univ., University Park, PA, United States, International Semiconductor Device Research Symposium, 978-1-4244-1891-6, 5-6 2007

“Atomic-scale defects involved in the negative-bias temperature instability”, Campbell, J.P.(1); Lenahan, P.M.(1); Cochrane, C.J.(1); Krishnan, A.T.; Krishnan, S.,(1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Device and Materials Reliability, v 7, n 4, 540-57 Dec. 2007

“Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices”, Campbell, J.P.(1); Lenahan, P.M.(1); Krishnan, A.T.; Krishnan, S.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 91, n 13, 1-3 24 Sept. 2007

“Location, structure, and density of states of NBTI-induced defects in plasma nitrided pMOSFETs”, Campbell, J.P.(1); Lenahan, P.M.(1); Krishnan, A.T.; Krishnan, S.,(1) Pennsylvania State Univ., University Park, PA, United States, 2007 IEEE International Reliability Physics Symposium Proceedings (IEEE Cat. No.07CH37867), 1-4244-0918-7, 8 pp. 2007

“Electron spin resonance observations of oxygen deficient silicon atoms in the interfacial layer of hafnium oxide based metal-oxide-silicon structures”, Ryan, J.T.(1); Lenahan, P.M.(1); Bersuker, G.; Lysaght, P.,(1) Univ. Park, Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 90, n 17, 173513-1-3 23 April 2007

“Deep level defects involved in MOS device instabilities”, Lenahan, P.M.(1),(1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Microelectronics Reliability, v 47, n 6, 890-8 June 2007

“Deep level defects which limit current gain in 4H SiC bipolar junction transistors”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.J.,(1) Univ. Park, Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 90, n 12, 123501-1-3 19 March 2007

“Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination”, Cochrane, C.J.(1); Lenahan, P.M.(1); Campbell, J.P.(1); Bersuker, G.; Neugroschel, A.,(1) Univ. Park, Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 90, n 12, 123502-1-3 19 March 2007

“Negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination”, Cochrane, C.J.(1); Lenahan, P.M.(1); Campbell, J.P.(1); Bersuker, G.; Neugroschel, A.,(1) Pennsylvania State Univ., University Park, PA, United States, 2006 IEEE International Integrated Reliability Workshop Final Report (IEEE Cat No. 06TH88779C), 1-4244-0296-4, 5 pp. 2006

“Identification of trapping defects in 4H-silicon carbide metal-insulator-semiconductor field-effect transistors by electrically detected magnetic resonance”, Dautrich, M.S.(1); Lenahan, P.M.(1); Lelis, A.J.,(1) Eng. Sci. Dept., Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 89, n 22, 223502-1-3 27 Nov. 2006

“Identification of deep level defects in SiC bipolar junction transistors”, Lenahan, P.M.(1); Pfeiffenberger, N.T.(1); Pribicko, T.G.(1); Lelis, A.J.,(1) Pennsylvania State Univ., University Park, PA, United States, Materials Science Forum, v 527-529, pt.1, 567-9 2006

“Observation of deep-level centers in 4H-silicon carbide metal oxide semiconductor field effect transistors by spin dependent recombination”, Dautrich, M.S.(1); Lenahan, P.M.(1); Lelis, A.J.,(1) Pennsylvania State Univ., University Park, PA, United States, Materials Science Forum, v 527-529, pt.2, 1011-14 2006

“The effect of interfacial layer properties on the performance of Hf-based gate stack devices”, Bersuker, G.(1); Park, C.S.(1); Barnett, J.(1); Lysaght, P.S.(1); Kirsch, P.D.(1); Young, C.D.(1); Choi, R.(1); Lee, B.H.(1); Foran, B.; van Benthem, K.; Pennycook, S.J.; Lenahan, P.M.; Ryan, J.T.,(1) Front End Process Div., Austin, TX, United States, Journal of Applied Physics, v 100, n 9, 94108-1-6 1 Nov. 2006

“NBTI: an atomic-scale defect perspective”, Campbell, J.P.(1); Lenahan, P.M.(1); Krishnan, A.T.; Krishnan, S.,(1) Pennsylvania State Univ., University Park, PA, United States, 2006 IEEE International Reliability Physics Symposium proceedings. 44th Annual, 0-7803-9498-4, 6 pp. 2006

“Observations of NBTI-induced atomic-scale defects”, Campbell, J.P.(1); Lenahan, P.M.(1); Krishnan, A.T.; Krishnan, S.,(1) Univ. Park, Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Device and Materials Reliability, v 6, n 2, 117-22 June 2006

“Observations of NBTI-induced atomic scale defects”, Campbell, J.P.(1); Lenahan, P.M.(1); Krishnan, A.T.; Krishnan, S.,(1) Penn State Univ., University Park, PA, United States, 2005 IEEE International Integrated Reliability Workshop Final Report (IEEE Cat. No.05TH8799), 0-7803-8992-1, 4 pp. 2005

“Identification of the atomic scale defects involved in radiation damage in HfO2 based MOS devices”, Ryan, J.T.(1); Lenahan, P.M.(1); Kang, A.Y.(1); Conley, J.F., Jr.; Bersuker, G.; Lysaght, P.,(1) Univ. Park, Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 52, n 6, 2272-5 Dec. 2005

“Direct observation of the structure of defect centers involved in the negative bias temperature instability”, Campbell, J.P.(1); Lenahan, P.M.(1); Krishnan, A.T.; Krishnan, S.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 87, n 20, 204106-1-3 14 Nov. 2005

“Magnetic resonance studies of trapping centers in high-κ dielectric films on silicon”, Lenahan, P.M.(1); Conley, J.F., Jr.,(1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Device and Materials Reliability, v 5, n 1, 90-102 March 2005

“Observation of deep level centers in 4H and 6H silicon carbide metal oxide semiconductor field effect transistors”, Meyer, D.J.(1); Dautrich, M.S.(1); Lenahan, P.M.(1); Lelis, A.,(1) Pennsylvania State Univ., University Park, PA, United States, Materials Science Forum, v 483-485, 593-6 2005

“Interface defects in Si/HfO2-based metal-oxide-semiconductor field-effect transistors”, Pribicko, T.G.(1); Campbell, J.P.(1); Lenahan, P.M.(1); Tsai, W.; Kerber, A.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 86, n 17, 173511-1-3 25 April 2005

“Observation of trapping defects in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination”, Meyer, D.J.(1); Lenahan, P.M.(1); Lelis, A.J.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 86, n 2, 23503-1-3 10 Jan. 2005

“Non-intrusive nondestructive method to detect fissile material”, Jayaraman, S.(1); Tittmann, B.R.(1); Shull, P.J.; Maillis, G.; Lenahan, P.M.; Ze, F.,(1) Pennsylvania State Univ., University Park, PA, United States, Proceedings of the SPIE - The International Society for Optical Engineering, v 5395, n 1, 8-14 2004

“Atomic scale defects involved in NBTI [MOSFET reliability]”, Campbell, J.P.(1); Lenahan, P.M.(1); Krishnan, A.T.; Krishnan, S.,(1) Pennsylvania State Univ., University Park, PA, United States, 2004 IEEE International Integrated Reliability Workshop Final Report (IEEE Cat. No.04TH8752), 0-7803-8517-9, 118-20 2004

“Atomic scale defects in the Si/SiON system and the negative bias temperature instability”, Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, 2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866), 0-7803-8528-4, 299-302 2004

“Structure of 6H silicon carbide/silicon dioxide interface trapping defects”, Meyer, D.J.(1); Bohna, N.A.(1); Lenahan, P.M.(1); Lelis, A.J.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 84, n 17, 3406-8 26 April 2004

“Reliability concerns for HfO2/Si (and (ZrO2/Si) systems: interface and dielectric traps”, Kang, A.Y.(1); Lenahan, P.M.(1); Vonley, J.F., JR; Ono, Y.,(1) Pennsylvania State Univ., University Park, PA, United States, 2003 IEEE International Integrated Reliability Workshop Final Report (IEEE Cat. No.03TH8715), 0-7803-8157-2, 24-7 2003

“Non-invasive nature of corona charging on thermal Si/SiO2 structures”, Dautrich, M.(1); Lenahan, P.M.(1); Kang, A.Y.(1); Conley, J.F., JR,(1) Penn State Univ., PA, United States, 2003 IEEE International Integrated Reliability Workshop Final Report (IEEE Cat. No.03TH8715), 0-7803-8157-2, 7-9 2003

“Atomic scale defects involved in MOS reliability problems”, Lenahan, P.M.(1),(1) Dept. of ESM, Pennsylvania State Univ., University Park, PA, United States, Microelectronic Engineering, v 69, n 2-4, 173-81 Sept. 2003

“Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si”, Kang, A.Y.(1); Lenahan, P.M.(1); Conley, J.F.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 83, n 16, 3407-9 20 Oct. 2003

“Reliability concerns for HfO2/Si devices: interface and dielectric traps”, Kang, A.Y.(1); Lenahan, P.M.(1); Conley, J.F., Jr.,(1) Pennsylvania State Univ., University Park, PA, United States, 2002 IEEE International Integrated Reliability Workshop. Final Report (Cat. No.02TH8634), 0-7803-7558-0, 102-7 2002

“Defects produced by medium energy proton bombardment of MOS devices”, Lenahan, P.M.(1); Mishima, T.D.(1); Jumper, J.B.(1); Fogarty, T.N.; Marrero, M.; Cruz, L.; Shojah-Ardalan, S.; Dwivedi, R.; Wilkins, R.; Trombetta, L.P.; Singh, C.,(1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605), 0-7803-7313-8, 105-9 2002

“The radiation response of the high dielectric-constant hafnium oxide/silicon system”, Kang, A.Y.(1); Lenahan, P.M.(1); Conley, J.F., Jr.,(1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 49, n 6, pt.1, 2636-42 Dec. 2002

“Radiation-induced interface traps in MOS devices: capture cross section and density of states of Pb1 silicon dangling bond centers”, Lenahan, P.M.(1); Bohna, N.A.(1); Campbell, J.P.(1),(1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 49, n 6, pt.1, 2708-12 Dec. 2002

“Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si”, Kang, A.Y.(1); Lenahan, P.M.(1); Conley, J.F., Jr.; Solanki, R.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 81, n 6, 1128-30 5 Aug. 2002

“Atomic scale defects involved in stress induced leakage currents in very thin oxides on silicon”, Lenahan, P.M.(1); Kang, A.Y.(1); Campbell, J.P.(1),(1) Pennsylvania State Univ., University Park, PA, United States, Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices (SPIE Vol.4746), 0-8194-4500-2, 608-15 vol.1 2002

“Density of states of Pb1 Si/SiO2 interface trap centers”, Campbell, J.P.(1); Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 80, n 11, 1945-7 18 March 2002

“Direct experimental evidence for atomic scale structural changes involved in the interface-trap transformation process”, Lenahan, P.M.(1); Mishima, T.D.; Jumper, J.; Fogarty, T.N.; Wilkins, R.T.,(1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 48, n 6, pt.1, 2131-5 Dec. 2001

“Atomic-scale processes involved in long-term changes in the density of states distribution at the Si/SiO2 interface”, Lenahan, P.M.(1); Mishima, T.D.(1); Fogarty, T.N.; Wilkins, R.,(1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 79, n 20, 3266-8 12 Nov. 2001

“Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents”, Lenahan, P.M.(1); Mele, J.J.(1); Campbell, J.P.(1); Kang, A.Y.(1); Lowry, R.K.; Woodbury, D.; Liu, S.T.; Weimer, R.,(1) Pennsylvania State Univ., University Park, PA, United States, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167), 0-7803-6587-9, 150-5 2001

“Response to “Comment on `Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 “hyperfine spectrum” ' ” [Appl. Phys. Lett. 78, 1451 (2001)]”, Mishima, T.D.(1); Lenahan, P.M.(1); Weber, W.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 78, n 10, 1453-4 5 March 2001

“Identification of atomic scale defects involved in oxide leakage currents”, Lenahan, P.M.(1); Mele, J.J.(1); Campbell, J.(1); Kang, A.(1); Lowry, R.K.; Woodbury, D.; Liu, S.T.,(1) Pennsylvania State Univ., University Park, PA, United States, 2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515), 0-7803-6392-2, 112-15 2000

“A spin-dependent recombination study of radiation-induced Pb1 centers at the (001) Si/SiO2 interface”, Mishima, T.D.(1); Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 47, n 6, pt.3, 2249-55 Dec. 2000

“E' centers and leakage currents in the gate oxides of metal oxide silicon devices”, Lenahan, P.M.(1); Mele, J.J.(1),(1) Pennsylvania State Univ., University Park, PA, United States, Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), v 18, n 4, 2169-73 July 2000

“Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 “hyperfine spectrum””, Mishima, T.D.(1); Lenahan, P.M.(1); Weber, W.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 76, n 25, 3771-3 19 June 2000

“Leakage currents and silicon dangling bonds in amorphous silicon dioxide thin films”, Lenahan, P.M.(1); Mele, J.J.(1); Lowry, R.K.; Woodbury, D.,(1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Journal of Non-Crystalline Solids, v 266-269, 835-9 May 2000

“Oxide leakage currents and oxygen deficient silicon”, Lenahan, P.M.(1); Mele, J.(1); Fattu, M.(1); Lowry, R.K.; Woodbury, D.,(1) Pennsylvania State Univ., University Park, PA, United States, Silicon Nitride and Silicon Dioxide Thin Insulating Films. Proceedings of the Fifth International Symposium (Electrochemical Society Proceedings Vol.99-6), 1-56677-228-1, 50-6 1999

“Predicting radiation response from process parameters: Verification of a physically based predictive model”, Lenahan, P.M.(1); Mele, J.J.(1); Conley, J.F., Jr.; Lowry, R.K.; Woodbury, D.,(1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 46, n 6, pt.1, 1534-43 Dec. 1999

“A preliminary investigation of the kinetics of post-oxidation anneal induced E'-precursor formation”, Conley, J.F., Jr.(1); Lenahan, P.M.; McArthur, W.F.,(1) Commercial Syst., Dynamics Res. Corp., Beaverton, OR, United States, 1998 IEEE International Integrated Reliability Workshop Final Report (Cat. No.98TH8363), 0-7803-4881-8, 62-7 1998

“A comprehensive physically based predictive model for radiation damage in MOS systems”, Lenahan, P.M.(1); Conley, J.R., Jr.,(1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 45, n 6, pt.1, 2413-23 Dec. 1998

“Preliminary investigation of the kinetics of postoxidation rapid thermal anneal induced hole-trap-precursor formation in microelectronic SiO2 films”, Conley, J.F., Jr.(1); Lenahan, P.M.; McArthur, W.F.,(1) Dynamics Res. Corp., Beaverton, OR, United States, Applied Physics Letters, v 73, n 15, 2188-90 12 Oct. 1998

“What can electron paramagnetic resonance tell us about the Si/SiO2 system?”, Lenahan, P.M.(1); Conley, J.F., Jr.,(1) Pennsylvania State Univ., University Park, PA, United States, Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), v 16, n 4, 2134-53 July-Aug. 1998

“Response to “Comment on `A model of hole trapping in SiO2 films on silicon' ” [J. Appl. Phys. 83, 5591 (1998)]”, Lenahan, P.M.(1); Conley, J.F., Jr.,(1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 83, n 10, 5593-4 15 May 1998

“Process integration of an interlevel dielectric (ILDO) module using a building-in reliability approach”, Paulsen, R.E.(1); Kyono, C.S.; Wang, Y.; Klein, K.M.; Lim, I.-S.; Tinkler, S.; Bellamak, B.; Odle, D.W.; Zhou, Z.; Dahl, P.; Giovanetto, M.; Makwana, J.; Patel, S.; Reno, C.; Lenahan, P.M.; Billman, C.A.,(1) Motorola Inc., East Kilbride, United Kingdom, IEEE Transactions on Electron Devices, v 45, n 3, 655-64 March 1998

“A physically based predictive model of charge trapping in gate oxides”, Lenahan, P.M.(1); Conley, J.F., Jr.; Wallace, B.D.,(1) Pennsylvania State Univ., University Park, PA, United States, Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, 1-56677-137-4, 275-84 1997

“Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs”, Billman, C.A.(1); Lenahan, P.M.(1); Weber, W.,(1) Pennsylvania State Univ., University Park, PA, United States, Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, 1-56677-137-4, 134-42 1997

“Trapping centers in borophosphosilicate and phosphosilicate thin films on silicon”, Lenahan, P.M.(1); Billman, C.A.(1); Fuller, R.; Lowry, R.K.; Evans, H.,(1) Pennsylvania State Univ., University Park, PA, United States, Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, 1-56677-137-4, 46-54 1997

“Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs”, Billman, C.A.(1); Lenahan, P.M.(1); Weber, W.,(1) Pennsylvania State Univ., University Park, PA, United States, Materials Reliability in Microelectronics VII. Symposium, , 181-4 1997

“Predictive model of SOI buried oxide charging based on statistical mechanics and spin resonance data”, Conley, J.F., Jr.(1); Lenahan, P.M.; Cole, P.,(1) Dynamics Res. Corp., Beaverton, OR, United States, 1997 IEEE International SOI Conference Proceedings (Cat. No.97CH36069), 0-7803-3938-X, 176-7 1997

“Quantitative model of radiation induced charge trapping in SiO2”, Conley, J.F., Jr.(1); Lenahan, P.M.; Wallace, B.D.; Cole, P.,(1) Dept. of Commercial Syst., Dynamics Res. Corp., Beaverton, OR, United States, IEEE Transactions on Nuclear Science, v 44, n 6, pt.1, 1804-9 Dec. 1997

“A study of charge trapping in PECVD PTEOS films”, Lenahan, P.M.(1); Billman, C.A.(1); Fuller, R.; Evans, H.; Speece, W.H.; DeCrosta, D.; Lowry, R.,(1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 44, n 6, pt.1, 1834-9 Dec. 1997

“A physically based predictive model of Si/SiO2 interface trap generation resulting from the presence of holes in the SiO2”, Lenahan, P.M.(1); Conley, J.F., Jr., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 71, n 21, 3126-8 24 Nov. 1997

“Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs”, Billman, C.A.(1); Lenahan, P.M.(1); Weber, W., (1) Pennsylvania State Univ., University Park, PA, United States, Microelectronic Engineering, v 36, n 1-4, 271-4 June 1997

“A model of hole trapping in SiO2 films on silicon”, Lenahan, P.M.(1); Conley, J.F., Jr; Wallace, B.D., (1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 81, n 10, 6822-4 15 May 1997

“A review of electron spin resonance spectroscopy of defects in thin film SiO2 on Si”, Conley, J.F., Jr.(1); Lenahan, P.M., (1) Commercial Syst., Dynamics Res. Corp., Beaverton, OR, United States, Proceedings of the Third International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 3 1996, , 214-49 1996

“Physically based predictive model of oxide charging [MOSFET gate oxides]”, Conley, J.F., Jr.(1); Lenahan, P.M.; Wallace, B.D., (1) Dynamics Res. Corp., Beaverton, OR, United States, 1996 International Integrated Reliability Workshop Final Report (Cat. No.96TH8215), 0-7803-3598-8, 134-41 1996

“Electron spin resonance characterization of trapping centers in Unibond buried oxides”, Conley, J.F., Jr.(1); Lenahan, P.M.; Wallace, B.D., (1) Commercial Syst., Dynamics Res. Corp., Beaverton, OR, United States, IEEE Transactions on Nuclear Science, v 43, n 6, pt.1, 2635-8 Dec. 1996

“Electron spin resonance evidence that E'γ centers can behave as switching oxide traps”, Conley, J.F., Jr.(1); Lenahan, P.M.(1); Lelis, A.J.; Oldham, T.R., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 42, n 6, pt.1, 1744-9 Dec. 1995

“Electron spin resonance analysis of EP center interactions with H2: evidence for a localized EP center structure”, Conley, J.F., Jr.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 42, n 6, pt.1, 1740-3 Dec. 1995

“Electron spin resonance evidence for a localized EP(E'δ-like) defect structure”, Conley, J.F.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Defect and Impurity Engineered Semiconductors and Devices. Symposium, , 377-80 1995

“Electron spin resonance evidence for the structure of a switching oxide trap: long term structural change at silicon dangling bond sites in SiO2”, Conley, J.F., Jr.(1); Lenahan, P.M.(1); Lelis, A.J.; Oldham, T.R., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 67, n 15, 2179-81 9 Oct. 1995

“Hydrogen complexed EP (E'δ) centers and EP/H2 interactions: implications for EP structure”, Conley, J.F., Jr.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Microelectronic Engineering, v 28, n 1-4, 35-8 June 1995

“The effects of thermal nitridation and reoxidation on the interfacial stress and structure of silicon dioxide gate dielectrics”, Yount, J.T.(1); Lenahan, P.M.(1); Wyatt, P.W., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 77, n 2, 699-705 15 Jan. 1995

“Characterization of two E' center charge traps in conventionally grown thermal SiO2 on Si”, Conley, J.F., Jr.(1); Lenahan, P.M.(1); Evans, H.L.; Lowry, R.K.; Morthorst, T.J., (1) Pennsylvania State Univ., University Park, PA, United States, ESSDERC '94. Proceedings of the 24th European Solid State Device Research Conference, 2-86332-157-9, 309-12 1994

“Electron spin resonance characterization of electrically active oxide defects”, Evans, H.L.(1); Lowry, R.K.(1); Schultz, W.L.(1); Morthorst, T.J.; Lenahan, P.M.; Conley, J.F., (1) Harris Semicond., Melbourne, FL, United States, ISTFA '94. Proceedings of the 20th International Symposium for Testing and Failure Analysis, 0-87170-543-5, 33-40 1994

“The roles of several E' variants in thermal gate oxide reliability”, Conley, J.F.Jr.(1); Lenahan, P.M.(1); Evans, H.L.; Lowry, R.K.; Morthorst, T.J., (1) Pennsylvania State Univ., University Park, PA, United States, Materials Reliability in Microelectronics IV. Symposium, , 37-42 1994

“Comparing the structure and behavior of point defects in silicon oxynitride gate dielectrics formed by NH3-nitridation and N2O-growth/nitridation”, Yount, J.T.(1); Lenahan, P.M.(1); Saks, N.S.; Brown, G.A., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Materials Reliability in Microelectronics IV. Symposium, , 31-6 1994

“Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si”, Conley, J.F., Jr.(1); Lenahan, P.M.(1); Evans, H.L.; Lowry, R.K.; Morthorst, T.J., (1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 76, n 12, 8186-8 15 Dec. 1994

“Radiation effects in oxynitrides grown in N2O”, Saks, N.S.(1); Simons, M.; Fleetwood, D.M.; Yount, J.T.; Lenahan, P.M.; Klein, R.B., (1) Naval Res. Lab., Washington, DC, United States, IEEE Transactions on Nuclear Science, v 41, n 6, pt.1, 1854-63 Dec. 1994

“Observation and electronic characterization of two E' center charge traps in conventionally processed thermal SiO2 on Si”, Conley, J.F., Jr.(1); Lenahan, P.M.(1); Evans, H.L.; Lowry, R.K.; Morthorst, T.J., (1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 65, n 18, 2281-3 31 Oct. 1994

“Observation and electronic characterization of “new” E' center defects in technologically relevant thermal SiO2 on Si: an additional complexity in oxide charge trapping”, Conley, J.F., Jr.(1); Lenahan, P.M.(1); Evans, H.L.; Lowry, R.K.; Morthorst, T.J., (1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 76, n 5, 2872-80 1 Sept. 1994

“Comparison of defect structure in N2O- and NH3-nitrided oxide dielectrics”, Yount, J.T.(1); Lenahan, P.M.(1); Krick, J.T., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 76, n 3, 1754-8 1 Aug. 1994

“Enhancing reliability of CMOS devices using electrical techniques and electron spin resonance spectroscopy”, Evans, H.L.(1); Lowry, R.K.(1); Schultz, W.L.(1); Morthorst, J.; Lenahan, P.M.; Conley, J.F., (1) Harris Semicond. Reliability Eng., Melbourne, FL, United States, 1994 IEEE International Reliability Physics Proceeding. 32nd Annual (Cat. No.94CH3332-4), 0-7803-1357-7, 410-19 1994

“Molecular hydrogen, E' center hole traps, and radiation induced interface traps in MOS devices”, Conley, J.F., Jr.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Penn State Univ., State College, PA, United States, IEEE Transactions on Nuclear Science, v 40, n 6, pt.1, 1335-40 Dec. 1993

“Bridging nitrogen dangling bond centers and electron trapping in amorphous NH3-nitrided and reoxidized nitrided oxide films”, Yount, J.T.(1); Lenahan, P.M.(1), (1) Pennsylvania State Univ., University Park, PA, United States, Journal of Non-Crystalline Solids, v 164-166, pt.2, 1069-72 Dec. 1993

“An electron spin resonance study of the effects of thermal nitridation and reoxidation on Pb centers at (111) Si/SiO2 interfaces”, Yount, J.T.(1); Lenahan, P.M.(1); Wyatt, P.W., (1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 74, n 9, 5867-70 1 Nov. 1993

“Electron spin resonance and instabilities in metal insulator semiconductor systems”, Lenahan, P.M.(1), (1) Pennsylvania State Univ., University Park, PA, United States, Microelectronic Engineering, v 22, n 1-4, 129-38 Aug. 1993

“High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs: 29Si hyperfine spectra”, Gabrys, J.W.(1); Lenahan, P.M.(1); Weber, W., (1) Pennsylvania State Univ., University Park, PA, United States, Microelectronic Engineering, v 22, n 1-4, 273-6 Aug. 1993

“Radiation induced interface states and ESR evidence for room temperature interactions between molecular hydrogen and silicon dangling bonds in amorphous SiO2 films on Si”, Conley, J.F.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Microelectronic Engineering, v 22, n 1-4, 215-18 Aug. 1993

“Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon”, Conley, J.F.(1); Lenahan, P.M.(1), (1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 62, n 1, 40-2 4 Jan. 1993

“Evidence for a deep electron trap and charge compensation in separation by implanted oxygen oxides”, Conley, J.F.(1); Lenahan, P.M.(1); Roitman, P., (1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 39, n 6, pt.1, 2114-20 Dec. 1992

“Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon”, Conley, J.F.(1); Lenahan, P.M.(1), (1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 39, n 6, pt.1, 2186-91 Dec. 1992

“Electron spin resonance study of radiation-induced points defects in nitrided and reoxidized nitrided oxides”, Yount, J.T.(1); Lenahan, P.M.(1); Dunn, G.J., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 39, n 6, pt.1, 2211-19 Dec. 1992

“Electron spin resonance investigation of hole trapping in reoxidized nitrided silicon dioxide”, Chaiyasena, I.A.(1); Lenahan, P.M.(1); Dunn, G.J., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 72, n 2, 820-1 15 July 1992

“Electron spin resonance of separation by implanted oxygen oxides: evidence for structural change and a deep electron trap”, Conley, J.F., Jr.(1); Lenahan, P.M.(1); Roitman, P., (1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 60, n 23, 2889-91 8 June 1992

“ESR study of E' trapping centers in SIMOX oxides”, Conley, J.F.(1); Lenahan, P.M.(1); Roitman, P., (1) Pennsylvania State Univ., University Park, PA, United States, 1991 IEEE International SOI Conference Proceedings (Cat. No.91CH3053-6), 0-7803-0184-6, 12-13 1991

“Electron spin resonance study of E' trapping centers in SIMOX buried oxides”, Conley, J.F.(1); Lenahan, P.M.(1); Roitman, P., (1) Dept. of Eng. Sci., Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 38, n 6, pt.1, 1247-52 Dec. 1991

“Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films”, Kanicki, J.(1); Warren, W.L.; Seager, C.H.; Crowder, M.S.; Lenahan, P.M., (1) IBM Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, United States, Journal of Non-Crystalline Solids, v 137-138, pt.1, 291-4 Dec. 1991

“Direct observation of interfacial point defects generated by channel hot hole injection in n-channel metal oxide silicon field effect transistors”, Krick, J.T.(1); Lenahan, P.M.(1); Dunn, G.J., (1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 59, n 26, 3437-9 23 Dec. 1991

“Comment on `E' centers and nitrogen-related defects in silicon dioxide films' [and reply]”, Warren, W.L.(1); Lenahan, P.M.; Stathis, J.H.; Chapple-Sokol, J.; Tierney, E.; Bates, J., (1) Sandia Nat. Lab., Albuquerque, NM, United States, Applied Physics Letters, v 59, n 22, 2904-5 25 Nov. 1991

“Experimental evidence for two fundamentally different E' precursors in amorphous silicon dioxide”, Warren, W.L.(1); Lenahan, P.M.; Brinker, C.J., (1) Div. of Ceramics, Sandia Nat. Labs., Albuquerque, NM, United States, Journal of Non-Crystalline Solids, v 136, n 1-2, 151-62 1 Dec. 1991

“Photoinduced paramagnetic centers in amorphous silicon oxynitride”, Yount, J.T.(1); Kraus, G.T.(1); Lenahan, P.M.(1); Krick, D.T., (1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 70, n 9, 4969-72 1 Nov. 1991

“A search for protons in irradiated MOS oxides”, Krick, J.T.(1); Gabrys, J.W.(1); Semon, D.I.(1); Lenahan, P.M.(1), (1) Pennsylvania State Univ., University Park, PA, United States, Insulating Films on Semiconductors 1991. Proceedings from the 7th Biennial European Conference, including Satellite Workshops on Silicon on Insulator: Materials and Device Technology and The Physics of Hot Electron Degradation in Si MOSFETs, 0-7503-0168-6, 299-302 1991

“Electron spin resonance study of trapping centers in SIMOX buried oxides”, Conley, J.F.(1); Lenahan, P.M.(1); Roitman, P., (1) Pennsylvania State Univ., University Park, PA, United States, Insulating Films on Semiconductors 1991. Proceedings from the 7th Biennial European Conference, including Satellite Workshops on Silicon on Insulator: Materials and Device Technology and The Physics of Hot Electron Degradation in Si MOSFETs, 0-7503-0168-6, 259-62 1991

“Energy level of the nitrogen dangling bond in amorphous silicon nitride”, Warren, W.L.(1); Kanicki, J.; Robertson, J.; Lenahan, P.M., (1) Sandia Nat Labs., Albuquerque, NM, United States, Applied Physics Letters, v 59, n 14, 22, 24, 26, 28, 30, 32, 34 30 Sept. 1991

“Electrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin films”, Warren, W.L.(1); Lenahan, P.M.; Kanicki, J., (1) Electron. Properties of Mater. Div., Sandia Nat. Labs., Albuquerque, NM, United States, Journal of Applied Physics, v 70, n 4, 2220-5 15 Aug. 1991

“Relationship between strained silicon-oxygen bonds and radiation induced paramagnetic point defects in silicon dioxide”, Warren, W.L.(1); Lenahan, P.M.; Brinker, C.J., (1) Electron. Properties of Mater. Div., Sandia Nat. Labs., Albuquerque, NM, United States, Solid State Communications, v 79, n 2, 137-41 July 1991

“Sol-gel silicate thin-film electronic properties”, Warren, W.L.(1); Lenahan, P.M.(1); Brinker, C.J.; Ashley, C.S.; Reed, S.T.; Shaffer, G.R., (1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 69, n 8, pt.1, 4404-8 15 April 1991

“Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon”, Chaiyasena, I.A.(1); Lenahan, P.M.(1); Dunn, G.J., (1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 58, n 19, 2141-3 13 May 1991

“Direct experimental evidence for a dominant hole trapping center in SIMOX oxides”, Conley, J.F.(1); Lenahan, P.M.(1); Roitman, P., (1) Pennsylvania State Univ., University Park, PA, United States, 1990 IEEE SOS/SOI Technology Conference. (Cat. No.90CH2891-0), 0-87942-573-3, 164-5 1990

“Electron spin resonance studies of silicon dioxide films on silicon in integrated circuits using spin dependent recombination”, Jupina, M.A.(1); Lenahan, P.M.(1), (1) Pennsylvania State Univ., University Park, PA, United States, Atomic Scale Structure of Interfaces Symposium, , 191-6 1990

“Spin dependent recombination: a 29Si hyperfine study of radiation-induced Pb centers at the Si/SiO2 interface”, Jupina, M.A.(1); Lenahan, P.M.(1), (1) Pennsylvania State Univ., Philadelphia, Philadelphia, PA, United States, IEEE Transactions on Nuclear Science, v 37, n 6, pt.1, 1650-7 Dec. 1990

“Electron-nuclear double-resonance and electron-spin-resonance study of silicon dangling-bond centers in silicon nitride”, Warren, W.L.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Physical Review B (Condensed Matter), v 42, n 3, 1773-80 15 July 1990

“First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride”, Warren, W.L.(1); Lenahan, P.M.(1); Curry, S.E.(1), (1) Pennsylvania State Univ., University Park, PA, United States, Physical Review Letters, v 65, n 2, 207-10 9 July 1990

“Interaction of molecular hydrogen with trapped hole E' centers in irradiated and high field stressed metal/oxide/silicon oxides”, Lenahan, P.M.(1); Warren, W.L.(1); Krick, D.T.(1); Dressendorfer, P.V.; Triplett, B.B., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 67, n 12, 7612-14 15 June 1990

“Deposition of high quality sol-gel oxides on silicon”, Warren, W.L.(1); Lenahan, P.M.(1); Brinker, C.J.; Ashley, C.S.; Reed, S.T., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Journal of Electronic Materials, v 19, n 5, 425-8 May 1990

“Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films”, Curry, S.E.(1); Lenahan, P.M.(1); Krick, D.T.(1); Kanicki, J.; Kirk, C.T., (1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 56, n 14, 1359-61 2 April 1990

“First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride”, Lenahan, P.M.(1); Curry, S.E.(1), (1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 56, n 2, 157-9 8 Jan. 1990

“An electron spin resonance study of ISE SOI processed structures”, Lenahan, P.M.(1); Wilson, G.A.(1), (1) Pennsylvania State Univ., University Park, PA, United States, 1989 IEEE SOS/SOI Technology Conference (Cat. No.89CH2796-1), , 83-4 1989

“A spin dependent recombination study of radiation induced defects at and near the Si/SiO2 interface”, Jupina, M.A.(1); Lenahan, P.M.(1), (1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 36, n 6, pt.1, 1800-7 Dec. 1989

“Fundamental differences in the nature of electrically active point-defects in plasma enhanced chemical vapor deposited and thermal oxide structures”, Warren, W.L.(1); Lenahan, P.M.(1); Robinson, B., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Applied Surface Science, v 39, n 1-4, 406-11 Oct. 1989

“The nature of the dominant deep trap in amorphous silicon nitride films: evidence for a negative correlation energy”, Lenahan, P.M.(1); Krick, D.T.(1); Kanicki, J., (1) Pennsylvania State Univ., University Park, PA, United States, Applied Surface Science, v 39, n 1-4, 392-405 Oct. 1989

“29Si hyperfine spectra and structure of E' dangling-bond defects in plasma-enhanced chemical-vapor deposited silicon dioxide films on silicon”, Warren, W.L.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 66, n 11, 5488-91 1 Dec. 1989

“Electron spin resonance study of defects in PECVD silicon nitride”, Jousse, D.(1); Kanicki, J.(1); Mehran, F.(1); Lenahan, P.M., (1) IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, United States, Proceedings of the Symposium on Dielectric Films on Compound Semiconductors, , 290-8 1988

“Electrical properties of metal-oxide-silicon structures with sol-gel oxides”, Warren, W.L.(1); Lenahan, P.M.(1); Brinker, C.J., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Better Ceramics Through Chemistry III. Symposium, 0-931837-91-X, 803-10 1988

“Nature of the dominant deep trap in amorphous silicon nitride”, Krick, D.T.(1); Lenahan, P.M.(1); Kanicki, J., (1) Pennsylvania State Univ., University Park, PA, United States, Physical Review B (Condensed Matter), v 38, n 12, 8226-9 15 Oct. 1988

“Electrically active point defects in amorphous silicon nitride: an illumination and charge injection study”, Krick, D.T.(1); Lenahan, P.M.(1); Kanicki, J., (1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 64, n 7, 3558-63 1 Oct. 1988

“Electron-spin-resonance study of radiation-induced paramagnetic defects in oxides grown on (001) silicon substrates”, Yong Yun Kim(1); Lenahan, P.M., (1) Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 64, n 7, 3551-7 1 Oct. 1988

“Neutral E' centers in microwave downstream plasma-enhanced chemical-vapor-deposited silicon dioxide”, Warren, W.L.(1); Lenahan, P.M.(1); Robinson, B.; Stathis, J.H., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 53, n 6, 482-4 8 Aug. 1988

“Electron-spin-resonance study of defects in plasma-enhanced chemical vapor deposited silicon nitride”, Jousse, D.(1); Kanicki, J.(1); Krick, D.T.; Lenahan, P.M., (1) IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, United States, Applied Physics Letters, v 52, n 6, 445-7 8 Feb. 1988

“The nature of the deep hole trap in MOS oxides”, Witham, H.S.(1); Lenahan, P.M.(1), (1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v NS-34, n 6, pt.1, 1147-51 Dec. 1987

“A comparison of positive charge generation in high field stressing and ionizing radiation on MOS structures”, Warren, W.L.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v NS-34, n 6, pt.1, 1355-8 Dec. 1987

“Fundamental differences between thick and thin oxides subjected to high electric fields”, Warren, W.L.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 62, n 10, 4305-8 15 Nov. 1987

“Electronic properties of sol-gel-derived oxides on silicon”, Weimer, R.A.(1); Lenahan, P.M.(1); Marchione, T.A.(1); Brinker, C.J., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 51, n 15, 1179-81 12 Oct. 1987

“Nature of the E' deep hole trap in metal-oxide-semiconductor oxides”, Witham, H.S.(1); Lenahan, P.M.(1), (1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 51, n 13, 1007-9 28 Sept. 1987

“Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitride”, Krick, D.T.(1); Lenahan, P.M.(1); Kanicki, J., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 51, n 8, 608-10 24 Aug. 1987

“Generation of paramagnetic point defects in silicon dioxide films on silicon through electron injection and exposure to ionizing radiation”, Lenahan, P.M.(1); Warren, W.L.(1); Dressendorfer, P.V.; Mikawa, R.E., (1) Pennsylvania State Univ., University Park, PA, United States, Zeitschrift fur Physikalische Chemie, Neue Folge, v 151, pt.1-2, 235-50 1987

“Electron spin resonance study of high field stressing in metal-oxide-silicon device oxides”, Warren, W.L.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 49, n 19, 1296-8 10 Nov. 1986

“Thermal-equilibrium defect processes in hydrogenated amorphous silicon”, Smith, Z.E.(1); Aljishi, S.(1); Slobodin, D.(1); Chu, V.(1); Wagner, S.(1); Lenahan, P.M.; Arya, R.R.; Bennett, M.S., (1) Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, United States, Physical Review Letters, v 57, n 19, 2450-3 10 Nov. 1986

“Electron spin resonance study of interface states induced by electron injection in metal-oxide-semiconductor devices”, Mikawa, R.E.(1); Lenahan, P.M., (1) Sandia Nat. Lab., Albuquerque, NM, United States, Journal of Applied Physics, v 59, n 6, 2054-9 15 March 1986

“Dangling bonds and sub-gap optical absorption in silicon”, Seager, C.H.(1); Lenahan, P.M.(1); Brower, K.L.(1); Mikawa, R.E.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Microscopic Identification of Electronic Defects in Semiconductors, 0-931837-11-1, 539-44 1985

“Optical absorption and dangling bonds in damaged silicon”, Seager, C.H.(1); Lenahan, P.M.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Journal of Applied Physics, v 58, n 7, 2709-12 1 Oct. 1985

“Dangling bonds and the Urbach tail in silicon”, Seager, C.H.(1); Lenahan, P.M.(1); Brower, K.L.(1); Mikawa, R.E.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Journal of Applied Physics, v 58, n 7, 2704-8 1 Oct. 1985

“Structural damage at the Si/SiO2 interface resulting from electron injection in metal-oxide-semiconductor devices”, Mikawa, R.E.(1); Lenahan, P.M.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Applied Physics Letters, v 46, n 6, 550-2 15 March 1985

“A comparison of ionizing radiation and hot electron effects in MOS structures”, Milawa, R.E.(1); Lenahan, P.M.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, IEEE Transactions on Nuclear Science, v NS-31, n 6, 1573-5 Dec. 1984

“Post-shock chemical and ESR analysis of acrylamide and selected anthracene derivatives”, Dodson, B.W.(1); Arnold, C., Jr.(1); Venturini, E.L.(1); Lenahan, P.M.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Shock Waves in Condensed Matter - 1983. Proceedings of the American Physical Society Topical Conference, 0-444-86904-2, 423-5 1984

“Effects of light and modulation frequency on spin-dependent trapping at silicon grain boundaries”, Lenahan, P.M.(1); Schubert, W.K.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Physical Review B (Condensed Matter), v 30, n 3, 1544-6 1 Aug. 1984

“Hole traps and trivalent silicon centers in metal/oxide/silicon devices”, Lenahan, P.M.(1); Dressendorfer, P.V.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Journal of Applied Physics, v 55, n 10, 3495-9 15 May 1984

“Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structures”, Lenahan, P.M.(1); Dressendorfer, P.V.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Applied Physics Letters, v 44, n 1, 96-8 1 Jan. 1984

“Microstructural variations in radiation hard and soft oxides observed through electron spin resonance”, Lenahan, P.M.(1); Dressendorfer, P.V.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, IEEE Transactions on Nuclear Science, v NS-30, n 6, 4602-4 Dec. 1983

“Spin dependent trapping in a polycrystalline silicon integrated circuit resistor”, Schubert, W.K.(1); Lenahan, P.M.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Applied Physics Letters, v 43, n 5, 497-9 1 Sept. 1983

“Spin dependent trapping at a silicon grain boundary”, Lenahan, P.M.(1); Schubert, W.K.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Solid State Communications, v 47, n 6, 423-5 Aug. 1983

“An electron spin resonance study of radiation-induced electrically active paramagnetic centers at the Si/SiO2 interface”, Lenahan, P.M.(1); Dressendorfer, P.V.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Journal of Applied Physics, v 54, n 3, 1457-60 March 1983

“Radiation-induced paramagnetic defects in MOS structures”, Lenahan, P.M.(1); Dressendorfer, P.V.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, IEEE Transactions on Nuclear Science, v ns-29, n 6, 1459-61 Dec. 1982

“Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface”, Lenahan, P.M.(1); Dressendorfer, P.V.(1), (1) Sandai Nat. Labs., Albuquerque, MN, United States, Applied Physics Letters, v 41, n 6, 542-4 15 Sept. 1982

“Defects and impurities in thermal oxides on silicon”, Brower, K.L.(1); Lenahan, P.M.(1); Dressendorfer, P.V.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Applied Physics Letters, v 41, n 3, 251-3 1 Aug. 1982

“Radiation-induced trivalent silicon defect buildup at the Si-SiO2 interface in MOS structures”, Lenahan, P.M.(1); Brower, K.L.(1); Dressendorfer, P.V.(1); Johnson, W.C., (1) Sandia Nat. Lab., Albuquerque, NM, United States, IEEE Transactions on Nuclear Science, v ns-28, n 6, 4105-6 Dec. 1981

“Giant dielectric constant in the one-dimensional semiconductor Meφ3As(TCNQ)2”, Lenahan, P.M.(1); Rowland, T.J.(1), (1) Dept. of Metall. & Min. Eng., Univ. of Illinois, Urbana, Urbana, IL, United States, Solid State Communications, v 37, n 3, 223-7 Jan. 1981

“Non-Ohmic electrical conductivity and giant dielectric constant in the quasi-one-dimensional semiconductor methyltriphenylarsonium ditetracyanoquinodimethanide”, Lenahan, P.M.(1); Rowland, T.J.(1), (1) Dept. of Metall. & Min. Eng., Univ. of Illinois, Urbana, Urbana, IL, United States, Physical Review B (Condensed Matter), v 23, n 2, 752-61 15 Jan. 1981

“Growth and characterization of large crystals of methyltriphenylarsonium tetracyanoquinodimethane [Meφ3As(TCNQ)2]”, Lenahan, P.M.(1); DePasquali, G.(1), (1) Phys. Dept., Univ. of Illinois, Urbana, Urbana, IL, United States, Journal of Crystal Growth, v 50, n 3, 739-42 Nov. 1980

“Non-ohmic electrical conduction in the highly one-dimensional semiconductor methyltriphenylarsonium tetracyanoquinodimethane”, Lenahan, P.M.(1); Rowland, T.J.(1), (1) Mettall. & Mining Engng. Dept., Univ. of Illinois at Urbana-Champaign, Urbana, IL, United States, Physical Review Letters, v 43, n 12, 879-82 17 Sept. 1979