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Publications

  1. “Defect Chemistry and electronic transport in low-kappa dielectrics studied with electrically detected magnetic resonance”, Mutch, M.J.(1), Lenahan, P.M.(1), King, S.W.(2), (1) Pennsylvania State Univ., University Park, PA, United States; (2) Intel Corp., Hillsboro, OR, United, Journal of Applied Physics, v 119, n 9, 94102 (8 pp.) 7 March 2016

  2. “Acceptor-oxygen vacancy defect dipoles and fully coordinated defect centers in a ferroelectric perovskite lattice: Electron paramagnetic resonance analysis of Mn2+ in single crystal BaTiO3”, Maier, R.A.(1); Pomorski, T.A.(1); Lenahan, P.M.(1); Randall, C.A.(1),(1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 118, n 16, 164102 (9 pp.) 28 Oct. 2015

  3. “Negative bias instability in 4H-SiC MOSFETS: evidence for structural changes in the SiC”, Anders, M.A.(1); Lenahan, P.M.(1); Lelis, A.J.(2),(1) Dept. of Eng. Sci. & Mech., Penn State Univ., University Park, PA, United States; (2) Power Components Branch, US Army Res. Lab., Adelphi, MD, United States, 2015 IEEE International Reliability Physics Symposium (IRPS), 978-1-4673-7362-3, 3E.4.1-5 2015

  4. “Relationship Between the 4H-SiC/SiO2 Interface Structure and Electronic Properties Explored by Electrically Detected Magnetic Resonance”, Anders, M.A.(1); Lenahan, P.M.(1); Cochrane, C.J.(2); Lelis, A.J.(3),(1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States; (2) Pennsylvania State Univ., University Park, PA, United States; (3) U.S. Army Res. Lab., Adelphi, MD, United States, IEEE Transactions on Electron Devices, v 62, n 2, 301-8 Feb. 2015

  5. “High, Low, and Zero Field Spin Dependent Recombination in 4H SiC Metal Oxide Semiconductor Field Effect and Bipolar Junction Transistors”, Lenahan, P.M.(1); Cochrane, C.J.(1); Lelis, A.J.(2),(1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States; (2) U.S. Army Res. Lab., Adelphi, MD, United States, ECS Transactions, v 64, n 7, 111-22 2014

  6. “Electrically detected magnetic resonance study of NBTI in 4H-SiC MOSFETs”, Anders, M.A.(1); Lenahan, P.M.(1); Follman, J.(1); Arthur, S.D.(2); McMahon, J.(2); Yu, L.(2); Zhu, X.(2); Lelis, A.J.(3),(1) Eng. Sci. & Mech., Pennsylvania State Univ., University Park, MD, United States; (2) Global Res., Gen. Electr., Niskayuna, NY, United States; (3) U.S. Army Res. Lab., Adelphi, MD, United States, 2014 IEEE International Integrated Reliability Workshop (IIRW). Final Report, 978-1-4799-7274-6, 16-19 2014

  7. “Defect structure and electronic properties of SiOC:H films used for back end of line dielectrics”, Pomorski, T.A.(1); Bittel, B.C.(1); Lenahan, P.M.(1); Mays, E.(2); Ege, C.(2); Bielefeld, J.(2); Michalak, D.(2); King, S.W.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Intel Corp., Hillsboro, OR, United States, Journal of Applied Physics, v 115, n 23, 234508 (20 pp.) 21 June 2014

  8. “Spin counting in electrically detected magnetic resonance via low-field defect state mixing”, Cochrane, C.J.(1); Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 104, n 9, 093503 (5 pp.) 3 March 2014

  9. “Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB”, Cochrane, C.J.(1); Lenahan, P.M.(1),(1) Eng. Sci., Pennsylvania State Univ., University Park, PA, United States, 2013 IEEE International Integrated Reliability Workshop. Final Report, 978-1-4799-0352-8, 88-9 2013

  10. “Electron paramagnetic resonance as a probe of technologically relevant processing effects on CdTe solar cell materials”, Pigott, M.(1); Young, L.(1); Lenahan, P.M.(1); Halverson, A.(2); Andreini, K.W.(2); Korevaar, B.A.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) G.E. Global Res., Niskayuna, NY, United States, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 978-1-4799-3299-3, 0635-8 2013

  11. “Interface defects and negative bias temperature instabilities in 4H-SiC PMOSFETs: a combined DCIV/SDR study”, Aichinger, T.(1); Lenahan, P.M.(1); Peters, D.(2),(1) Dept. of ESM, Pennsylvania State Univ., University Park, PA, United States; (2) Infineon Technol. AG, Erlangen, Germany, Materials Science Forum, v 740-742, 529-32 2013

  12. “Theory of hyperfine active nitrogen complexes observed in 4H-SiC diodes”, Tuttle, B.R.(2); Aichinger, T.(1); Lenahan, P.M.(1); Pantelides, S.T.(2),(1) Dept. of Eng. Sci., Pennsylvania State Univ., University Park, PA, United States; (2) Dept. of Phys. & Astron., Vanderbilt Univ., Nashville, TN, United States, Journal of Applied Physics, v 114, n 11, 113712 (4 pp.) 21 Sept. 2013

  13. “Defects and electronic transport in hydrogenated amorphous SiC films of interest for low dielectric constant back end of the line dielectric systems”, Pomorski, T.A.(1); Bittel, B.C.(1); Cochrane, C.J.(1); Lenahan, P.M.(1); Bielefeld, J.(2); King, S.W.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Intel Corp., Hillsboro, OR, United States, Journal of Applied Physics, v 114, n 7, 074501 (10 pp.) 21 Aug. 2013

  14. “Detection of interfacial Pb centers in Si/SiO2 metal-oxide-semiconducting field-effect transistors via zero-field spin dependent recombination with observation of precursor pair spin-spin interactions”, Cochrane, C.J.(1); Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 103, n 5, 053506 (5 pp.) 29 July 2013

  15. “The effect of nitric oxide anneals on silicon vacancies at and very near the interface of 4H SiC metal oxide semiconducting field effect transistors using electrically detected magnetic resonance”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.J.(2),(1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States; (2) US Army Res. Lab., Adelphi, MD, United States, Applied Physics Letters, v 102, n 19, 193507 (4 pp.) 13 May 2013

  16. “A means to study reliability based defects in fully processed devices utilizing zero-field spin dependent transport”, Cochrane, C.J.(1); Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, 2012 IEEE International Integrated Reliability Workshop (IIRW 2012), 978-1-4673-2749-7, 45-7 2012

  17. “Definitive identification of an important 4H SiC MOSFET interface/near interface trap”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.J.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) U.S. Army Res. Lab., Adelphi, MD, United States, Materials Science Forum, v 717-720, pt.1, 433-6 2012

  18. “Zero-field detection of spin dependent recombination with direct observation of electron nuclear hyperfine interactions in the absence of an oscillating electromagnetic field”, Cochrane, C.J.(1); Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 112, n 12, 123714 (6 pp.) 15 Dec. 2012

  19. “Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect”, Aichinger, T.(1); Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 101, n 8, 083504 (5 pp.) 20 Aug. 2012

  20. “Evidence for Pb center-hydrogen complexes after subjecting PMOS devices to NBTI stress - a combined DCIV/SDR study”, Aichinger, T.(1); Lenahan, P.M.(1); Grasser, T.(2); Pobegen, G.(3); Nelhiebel, M.(4),(1) Semicond. Spectrosc. Lab., Pennsylvania State Univ., State College, PA, United States; (2) Inst. for Microelectron., Tech. Univ. of Vienna, Vienna, Austria; (3) Kompetenzzentrum Automobil- und Industrieelektron. (KAI), Villach, Austria; (4) Infineon Technol. Austria, Villach, Austria, 2012 IEEE International Reliability Physics Symposium (IRPS), 978-1-4577-1678-2, XT.2.1-6 2012

  21. “A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions-A spin dependent recombination study”, Aichinger, T.(1); Lenahan, P.M.(1); Tuttle, B.R.(2); Peters, D.(3),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Pennsylvania State Univ., Erie, PA, United States; (3) Infineon Technol. AG, Erlangen, Germany, Applied Physics Letters, v 100, n 11, 112113 (4 pp.) 12 March 2012

  22. “Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.J.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) US Army Res. Lab., Adelphi, MD, United States, Applied Physics Letters, v 100, n 2, 023509 (3 pp.) 9 Jan. 2012

  23. “Electron paramagnetic resonance studies of interlayer dielectrics”, Bittel, B.C.(1); Pomorski, T.A.(1); Lenahan, P.M.(1); King, S.(2); Mays, E.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Intel Corp., University Park, PA, United States, 2011 IEEE International Integrated Reliability Workshop (IIRW), 978-1-4577-0113-9, 50-4 2011

  24. “Spin dependent charge pumping: A new tool for reliability studies”, Bittel, B.C.(1); Lenahan, P.M.(1); Ryan, J.T.(2); Fronheiser, J.(3); Lelis, A.J.(4),(1) Pennsylvania State Univ., University Park, PA, United States; (2) NIST, University Park, PA, United States; (3) GE Global Res., University Park, PA, United States; (4) US Army Res. Lab., University Park, PA, United States, 2011 IEEE International Integrated Reliability Workshop (IIRW), 978-1-4577-0113-9, 142-5 2011

  25. “Spin dependent charge pumping: A new tool for MOS interface characterization”, Bittel, B.C.(1); Lenahan, P.M.(1); Ryan, J.T.(2); Fronheiser, J.(3); Lelis, A.J.(4),(1) Pennsylvania State Univ., University Park, PA, United States; (2) NIST, Gaithersburg, MD, United States; (3) GE Global Res., Niskayuna, NY, United States; (4) US Army Res. Lab., Adelphi, MD, United States, 2011 International Semiconductor Device Research Symposium (ISDRS 2011), 978-1-4577-1755-0, 2 pp. 2011

  26. “Electrically detected magnetic resonance study of a near interface trap in 4H SiC MOSFETs”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) US Army Res. Lab., Adelphi, MD, United States, 2011 International Semiconductor Device Research Symposium (ISDRS 2011), 978-1-4577-1755-0, 2 pp. 2011

  27. “Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors”, Bittel, B.C.(1); Lenahan, P.M.(1); Ryan, J.T.(2); Fronheiser, J.(3); Lelis, A.J.(4),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Semicond. Electron. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, United States; (3) GE Global Res., Niskayuna, NY, United States; (4) US Army Res. Lab., Adelphi, MD, United States, Applied Physics Letters, v 99, n 8, 083504 (3 pp.) 22 Aug. 2011

  28. “A model for NBTI in nitrided oxide MOSFETs which does not involve hydrogen or diffusion”, Lenahan, P.M.(1); Campbell, J.P.(2); Krishnan, A.T.(3); Krishnan, S.(3),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Nat. Inst. of Stand. & Technol., Gaithersburg, MD, United States; (3) Texas Instrum. Inc., Dallas, TX, United States, IEEE Transactions on Device and Materials Reliability, v 11, n 2, 219-26 June 2011

  29. “An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.J.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) US Army Res. Lab., Adelphi, MD, United States, Journal of Applied Physics, v 109, n 1, 014506 (12 pp.) 1 Jan. 2011

  30. “Color center formation in vacuum sintered Nd3xY3-3xAl5O12 transparent ceramics”, Stevenson, A.J.(1); Bittel, B.C.(1); Leh, C.G.(1); Xin Li(1); Dickey, E.C.(1); Lenahan, P.M.(2); Messing, G.L.(1),(1) Dept. of Mater. Sci. & Eng., Pennsylvania State Univ., University Park, PA, United States; (2) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 98, n 5, 051906 (3 pp.) 31 Jan. 2011

  31. “Defects in low-κ dielectrics and etch stop layers for use as interlayer dielectrics in ULSI”, Bittel, B.C.(1); Pomorski, T.A.(1); Lenahan, P.M.(1); King, S.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Intel Corp., PA, United States, 2010 IEEE International Integrated Reliability Workshop Final Report (IIRW 2010), 978-1-4244-8521-5, 37-41 2010

  32. “Spin dependent tunneling spectroscopy in 1.2 nm dielectrics”, Ryan, J.T.(1); Lenahan, P.M.(1); Krishnan, A.T.(2); Krishnan, S.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Texas Instrum., Dallas, TX, United States, Journal of Applied Physics, v 108, n 6, 064511 (6 pp.) 15 Sept. 2010

  33. “Reliability and Performance Limiting Defects in Low-κ Dielectrics for use as Interlayer Dielectrics”, Bittel, B.C.(1); Lenahan, P.M.(1); King, S.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Intel Corp., CA, United States, 2010 IEEE International Reliability Physics Symposium (IRPS 2010), 978-1-4244-5430-3, 947-50 2010

  34. “Energy resolved spin dependent trap assisted tunneling investigation of SILC related defects”, Ryan, J.T.(1); Lenahan, P.M.(1); Krishnan, A.T.; Krishnan, S.,(1) Pennsylvania State Univ., University Park, PA, United States, 2010 IEEE International Reliability Physics Symposium (IRPS 2010), 978-1-4244-5430-3, 1122-5 2010

  35. “Recovery-free electron spin resonance observations of NBTI degradation”, Ryan, J.T.(1); Lenahan, P.M.(1); Grasser, T.(2); Enichlmair, H.(3),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Inst. for Microelectron., Tech. Univ. of Vienna, Vienna, Austria; (3) Austriamicrosystems AG, Unterpremstaetten, Austria, 2010 IEEE International Reliability Physics Symposium (IRPS 2010), 978-1-4244-5430-3, 43-9 2010

  36. “A model for NBTI in nitrided oxide MOSFETs without hydrogen or diffusion”, Lenahan, P.M.(1),(1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, 2010 IEEE International Reliability Physics Symposium (IRPS 2010), 978-1-4244-5430-3, 1086-90 2010

  37. “Ultraviolet radiation effects on paramagnetic defects in low-κ dielectrics for ultralarge scale integrated circuit interconnects”, Bittel, B.C.(1); Lenahan, P.M.(1); King, S.W.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Intel Corp., Hillsboro, OR, United States, Applied Physics Letters, v 97, n 6, 063506 (3 pp.) 9 Aug. 2010

  38. “Observations of negative bias temperature instability defect generation via on the fly electron spin resonance”, Ryan, J.T.(1); Lenahan, P.M.(1); Grasser, T.(2); Enichlmair, H.(3),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Tech. Univ. of Vienna, Vienna, Austria; (3) Schloss Premstaetten, Austriamicrosystems AG, Unterpremstaetten, Austria, Applied Physics Letters, v 96, n 22, 223509 (3 pp.) 31 May 2010

  39. “EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors”, Cochrane, C.J.(1); Bittel, B.C.(1); Lenahan, P.M.(1); Fronheiser, J.(2); Matocha, K.(2); Lelis, A.(3),(1) Pennsylvania State Univ., University Park, PA, United States; (2) GE Global Res., Niskayuna, NY, United States; (3) US Army Res. Lab., Adelphi, MD, United States, Materials Science Forum, v 645-648, pt.1, 527-30 2009

  40. “What triggers NBTI? An “on the fly” electron spin resonance approach”, Ryan, J.T.(1); Lenahan, P.M.(1); Grasser, T.(2); Enichlmair, H.(3),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Inst. for Microelectron., Tech. Univ. of Vienna, Vienna, Austria; (3) Austriamicrosystems AG, Unterpremstaetten, Austria, 2009 IEEE International Integrated Reliability Workshop Final Report (IRW 2009), 978-1-4244-3921-8, 42-5 2009

  41. “Investigation of SILC via energy resolved spin dependent tunneling spectroscopy”, Ryan, J.T.(1); Lenahan, P.M.(1); Krishnan, A.T.(2); Krishnan, S.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Texas Instrum., Dallas, TX, United States, 2009 IEEE International Integrated Reliability Workshop Final Report (IRW 2009), 978-1-4244-3921-8, 1-4 2009

  42. “A radically different model for NBTI in nitrided oxide MOSFETs”, Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, 2009 IEEE International Integrated Reliability Workshop Final Report (IRW 2009), 978-1-4244-3921-8, 90-2 2009

  43. “Investigation of SILC via energy resolved spin dependent tunneling spectroscopy”, Ryan, J.T.(1); Lenahan, P.M.(1); Krishnan, A.(2); Krishnan, S.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Texas Instrum., Dallas, TX, United States, 2009 International Semiconductor Device Research Symposium (ISDRS 2009), 978-1-4244-6030-4, 2 pp. 2009

  44. “What triggers NBTI? An “on the fly” electron spin resonance approach”, Ryan, J.T.(1); Lenahan, P.M.(1); Grasser, T.(2); Enichlmair, H.(3),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Tech. Univ. of Vienna, Vienna, Austria; (3) AustriamicroSyst. AG, Unterpremstatten, Austria, 2009 International Semiconductor Device Research Symposium (ISDRS 2009), 978-1-4244-6030-4, 2 pp. 2009

  45. “Energy resolved spin dependent tunneling in 1.2 nm dielectrics”, Ryan, J.T.(1); Lenahan, P.M.(1); Krishnan, A.T.(2); Krishnan, S.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Texas Instrum., Dallas, TX, United States, Applied Physics Letters, v 95, n 10, 103503 (3 pp.) 7 Sept. 2009

  46. “Spin dependent recombination study of the atomic-scale effects of fluorine on the negative bias temperature instability”, Ryan, J.T.(1); Lenahan, P.M.(1); Krishnan, A.T.(2); Krishnan, S.(2); Campbell, J.P.(3),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Texas Instrum., Dallas, TX, United States; (3) Semicond. Electron. Div., NIST, Gaithersburg, MD, United States, 2009 IEEE International Reliability Physics Symposium (IRPS), 978-1-4244-2889-2, 988-91 2009

  47. “Electrically detected magnetic resonance studies of processing variations in 4H SiC based MOSFETs”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.J.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) US Army Res. Lab., Adelphi, MD, United States, Materials Science Forum, v 600-603, pt.2, 719-22 2009

  48. “Direct observation of lifetime killing defects in 4H SiC epitaxial layers through spin dependent recombination in bipolar junction transistors”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.J.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) US Army Res. Lab., Adelphi, MD, United States, Journal of Applied Physics, v 105, n 6, 064502 (7 pp.) 15 March 2009

  49. “An electrically-detected magnetic resonance study of the atomic-scale effects of fluorine on the negative bias temperature instability”, Ryan, J.T.(1); Lenahan, P.M.(1); Krishnan, A.T.(2); Krishnan, S.(2); Campbell, J.P.(3),(1) Pennsylvania State Univ., University Park, PA, United States; (2) Texas Instrum., Dallas, TX, United States; (3) NIST, Gaithersburg, MD, United States, IRW 2008. IEEE International Integrated Reliability Workshop Final Report, 978-1-4244-2194-7, 137-40 2008

  50. “Interface traps in silicon carbide MOSFETs”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.J.(2),(1) Pennsylvania State Univ., University Park, PA, United States; (2) US Army Res. Lab., Adelphi, MD, United States, IRW 2008. IEEE International Integrated Reliability Workshop Final Report, 978-1-4244-2194-7, 68-71 2008

  51. “Real time exponentially weighted recursive least squares adaptive signal averaging for enhancing the sensitivity of continuous wave magnetic resonance”, Cochrane, C.J.(1); Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, Journal of Magnetic Resonance, v 195, n 1, 17-22 Nov. 2008

  52. “Interfacial layer defects and instabilities in HfO2 MOS structures”, Ryan, J.T.(1); Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, 2008 IEEE International Reliability Physics Symposium (IRPS), 978-1-4244-2049-0, 665-6 2008

  53. “Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based metal-oxide-silicon field-effect transistors”, Ryan, J.T.(1); Lenahan, P.M.(1); Robertson, J.; Bersuker, G.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 92, n 12, 123506-1-3 24 March 2008

  54. “Identification of the atomic-scale defects involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors”, Campbell, J.P.(1); Lenahan, P.M.; Krishnan, A.T.; Krishnan, S.,(1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 103, n 4, 044505-1-11 15 Feb. 2008

  55. “Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based MOSFETs”, Ryan, J.T.(1); Lenahan, P.M.,(1) Pennsylvania State Univ., University Park, PA, United States, 2007 IEEE International Integrated Reliability Workshop. Final Report, 978-1-4244-1171-9, 107-10 2007

  56. “Atomic-scale defects involved in NBTI in plasma-nitrided PMOSFETS”, Campbell, J.P.(1); Lenahan, P.M.(1); Krishnan, A.T.; Krishnan, S.,(1) Perm State Univ., University Park, PA, United States, 2007 IEEE International Integrated Reliability Workshop. Final Report, 978-1-4244-1171-9, 12-17 2007

  57. “Detection of atomic scale defects in MOS reliability”, Lenahan, P.M.(1),(1) Pennsylvania State Univ., Pennsylvania, PA, United States, 2007 IEEE International Integrated Reliability Workshop. Final Report, 978-1-4244-1171-9, 162 2007

  58. “Atomic scale defects in 4H SiC/SiO2 using electron spin resonance”, Rape, A.(1); Lenahan, P.M.(1); Lelis, A.J.,(1) Pennsylvania State Univ., University Park, PA, United States, International Semiconductor Device Research Symposium, 978-1-4244-1891-6, 7-8 2007

  59. “Electrically detected magnetic resonance studies of processing variations in 4H SiC based MOSFETs”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.J.,(1) Dept. ESM, Pennsylvania State Univ., University Park, PA, United States, International Semiconductor Device Research Symposium, 978-1-4244-1891-6, 5-6 2007

  60. “Atomic-scale defects involved in the negative-bias temperature instability”, Campbell, J.P.(1); Lenahan, P.M.(1); Cochrane, C.J.(1); Krishnan, A.T.; Krishnan, S.,(1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Device and Materials Reliability, v 7, n 4, 540-57 Dec. 2007

  61. “Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices”, Campbell, J.P.(1); Lenahan, P.M.(1); Krishnan, A.T.; Krishnan, S.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 91, n 13, 1-3 24 Sept. 2007

  62. “Location, structure, and density of states of NBTI-induced defects in plasma nitrided pMOSFETs”, Campbell, J.P.(1); Lenahan, P.M.(1); Krishnan, A.T.; Krishnan, S.,(1) Pennsylvania State Univ., University Park, PA, United States, 2007 IEEE International Reliability Physics Symposium Proceedings (IEEE Cat. No.07CH37867), 1-4244-0918-7, 8 pp. 2007

  63. “Electron spin resonance observations of oxygen deficient silicon atoms in the interfacial layer of hafnium oxide based metal-oxide-silicon structures”, Ryan, J.T.(1); Lenahan, P.M.(1); Bersuker, G.; Lysaght, P.,(1) Univ. Park, Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 90, n 17, 173513-1-3 23 April 2007

  64. “Deep level defects involved in MOS device instabilities”, Lenahan, P.M.(1),(1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Microelectronics Reliability, v 47, n 6, 890-8 June 2007

  65. “Deep level defects which limit current gain in 4H SiC bipolar junction transistors”, Cochrane, C.J.(1); Lenahan, P.M.(1); Lelis, A.J.,(1) Univ. Park, Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 90, n 12, 123501-1-3 19 March 2007

  66. “Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination”, Cochrane, C.J.(1); Lenahan, P.M.(1); Campbell, J.P.(1); Bersuker, G.; Neugroschel, A.,(1) Univ. Park, Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 90, n 12, 123502-1-3 19 March 2007

  67. “Negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination”, Cochrane, C.J.(1); Lenahan, P.M.(1); Campbell, J.P.(1); Bersuker, G.; Neugroschel, A.,(1) Pennsylvania State Univ., University Park, PA, United States, 2006 IEEE International Integrated Reliability Workshop Final Report (IEEE Cat No. 06TH88779C), 1-4244-0296-4, 5 pp. 2006

  68. “Identification of trapping defects in 4H-silicon carbide metal-insulator-semiconductor field-effect transistors by electrically detected magnetic resonance”, Dautrich, M.S.(1); Lenahan, P.M.(1); Lelis, A.J.,(1) Eng. Sci. Dept., Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 89, n 22, 223502-1-3 27 Nov. 2006

  69. “Identification of deep level defects in SiC bipolar junction transistors”, Lenahan, P.M.(1); Pfeiffenberger, N.T.(1); Pribicko, T.G.(1); Lelis, A.J.,(1) Pennsylvania State Univ., University Park, PA, United States, Materials Science Forum, v 527-529, pt.1, 567-9 2006

  70. “Observation of deep-level centers in 4H-silicon carbide metal oxide semiconductor field effect transistors by spin dependent recombination”, Dautrich, M.S.(1); Lenahan, P.M.(1); Lelis, A.J.,(1) Pennsylvania State Univ., University Park, PA, United States, Materials Science Forum, v 527-529, pt.2, 1011-14 2006

  71. “The effect of interfacial layer properties on the performance of Hf-based gate stack devices”, Bersuker, G.(1); Park, C.S.(1); Barnett, J.(1); Lysaght, P.S.(1); Kirsch, P.D.(1); Young, C.D.(1); Choi, R.(1); Lee, B.H.(1); Foran, B.; van Benthem, K.; Pennycook, S.J.; Lenahan, P.M.; Ryan, J.T.,(1) Front End Process Div., Austin, TX, United States, Journal of Applied Physics, v 100, n 9, 94108-1-6 1 Nov. 2006

  72. “NBTI: an atomic-scale defect perspective”, Campbell, J.P.(1); Lenahan, P.M.(1); Krishnan, A.T.; Krishnan, S.,(1) Pennsylvania State Univ., University Park, PA, United States, 2006 IEEE International Reliability Physics Symposium proceedings. 44th Annual, 0-7803-9498-4, 6 pp. 2006

  73. “Observations of NBTI-induced atomic-scale defects”, Campbell, J.P.(1); Lenahan, P.M.(1); Krishnan, A.T.; Krishnan, S.,(1) Univ. Park, Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Device and Materials Reliability, v 6, n 2, 117-22 June 2006

  74. “Observations of NBTI-induced atomic scale defects”, Campbell, J.P.(1); Lenahan, P.M.(1); Krishnan, A.T.; Krishnan, S.,(1) Penn State Univ., University Park, PA, United States, 2005 IEEE International Integrated Reliability Workshop Final Report (IEEE Cat. No.05TH8799), 0-7803-8992-1, 4 pp. 2005

  75. “Identification of the atomic scale defects involved in radiation damage in HfO2 based MOS devices”, Ryan, J.T.(1); Lenahan, P.M.(1); Kang, A.Y.(1); Conley, J.F., Jr.; Bersuker, G.; Lysaght, P.,(1) Univ. Park, Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 52, n 6, 2272-5 Dec. 2005

  76. “Direct observation of the structure of defect centers involved in the negative bias temperature instability”, Campbell, J.P.(1); Lenahan, P.M.(1); Krishnan, A.T.; Krishnan, S.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 87, n 20, 204106-1-3 14 Nov. 2005

  77. “Magnetic resonance studies of trapping centers in high-κ dielectric films on silicon”, Lenahan, P.M.(1); Conley, J.F., Jr.,(1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Device and Materials Reliability, v 5, n 1, 90-102 March 2005

  78. “Observation of deep level centers in 4H and 6H silicon carbide metal oxide semiconductor field effect transistors”, Meyer, D.J.(1); Dautrich, M.S.(1); Lenahan, P.M.(1); Lelis, A.,(1) Pennsylvania State Univ., University Park, PA, United States, Materials Science Forum, v 483-485, 593-6 2005

  79. “Interface defects in Si/HfO2-based metal-oxide-semiconductor field-effect transistors”, Pribicko, T.G.(1); Campbell, J.P.(1); Lenahan, P.M.(1); Tsai, W.; Kerber, A.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 86, n 17, 173511-1-3 25 April 2005

  80. “Observation of trapping defects in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination”, Meyer, D.J.(1); Lenahan, P.M.(1); Lelis, A.J.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 86, n 2, 23503-1-3 10 Jan. 2005

  81. “Non-intrusive nondestructive method to detect fissile material”, Jayaraman, S.(1); Tittmann, B.R.(1); Shull, P.J.; Maillis, G.; Lenahan, P.M.; Ze, F.,(1) Pennsylvania State Univ., University Park, PA, United States, Proceedings of the SPIE - The International Society for Optical Engineering, v 5395, n 1, 8-14 2004

  82. “Atomic scale defects involved in NBTI [MOSFET reliability]”, Campbell, J.P.(1); Lenahan, P.M.(1); Krishnan, A.T.; Krishnan, S.,(1) Pennsylvania State Univ., University Park, PA, United States, 2004 IEEE International Integrated Reliability Workshop Final Report (IEEE Cat. No.04TH8752), 0-7803-8517-9, 118-20 2004

  83. “Atomic scale defects in the Si/SiON system and the negative bias temperature instability”, Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, 2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866), 0-7803-8528-4, 299-302 2004

  84. “Structure of 6H silicon carbide/silicon dioxide interface trapping defects”, Meyer, D.J.(1); Bohna, N.A.(1); Lenahan, P.M.(1); Lelis, A.J.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 84, n 17, 3406-8 26 April 2004

  85. “Reliability concerns for HfO2/Si (and (ZrO2/Si) systems: interface and dielectric traps”, Kang, A.Y.(1); Lenahan, P.M.(1); Vonley, J.F., JR; Ono, Y.,(1) Pennsylvania State Univ., University Park, PA, United States, 2003 IEEE International Integrated Reliability Workshop Final Report (IEEE Cat. No.03TH8715), 0-7803-8157-2, 24-7 2003

  86. “Non-invasive nature of corona charging on thermal Si/SiO2 structures”, Dautrich, M.(1); Lenahan, P.M.(1); Kang, A.Y.(1); Conley, J.F., JR,(1) Penn State Univ., PA, United States, 2003 IEEE International Integrated Reliability Workshop Final Report (IEEE Cat. No.03TH8715), 0-7803-8157-2, 7-9 2003

  87. “Atomic scale defects involved in MOS reliability problems”, Lenahan, P.M.(1),(1) Dept. of ESM, Pennsylvania State Univ., University Park, PA, United States, Microelectronic Engineering, v 69, n 2-4, 173-81 Sept. 2003

  88. “Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si”, Kang, A.Y.(1); Lenahan, P.M.(1); Conley, J.F.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 83, n 16, 3407-9 20 Oct. 2003

  89. “Reliability concerns for HfO2/Si devices: interface and dielectric traps”, Kang, A.Y.(1); Lenahan, P.M.(1); Conley, J.F., Jr.,(1) Pennsylvania State Univ., University Park, PA, United States, 2002 IEEE International Integrated Reliability Workshop. Final Report (Cat. No.02TH8634), 0-7803-7558-0, 102-7 2002

  90. “Defects produced by medium energy proton bombardment of MOS devices”, Lenahan, P.M.(1); Mishima, T.D.(1); Jumper, J.B.(1); Fogarty, T.N.; Marrero, M.; Cruz, L.; Shojah-Ardalan, S.; Dwivedi, R.; Wilkins, R.; Trombetta, L.P.; Singh, C.,(1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605), 0-7803-7313-8, 105-9 2002

  91. “The radiation response of the high dielectric-constant hafnium oxide/silicon system”, Kang, A.Y.(1); Lenahan, P.M.(1); Conley, J.F., Jr.,(1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 49, n 6, pt.1, 2636-42 Dec. 2002

  92. “Radiation-induced interface traps in MOS devices: capture cross section and density of states of Pb1 silicon dangling bond centers”, Lenahan, P.M.(1); Bohna, N.A.(1); Campbell, J.P.(1),(1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 49, n 6, pt.1, 2708-12 Dec. 2002

  93. “Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si”, Kang, A.Y.(1); Lenahan, P.M.(1); Conley, J.F., Jr.; Solanki, R.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 81, n 6, 1128-30 5 Aug. 2002

  94. “Atomic scale defects involved in stress induced leakage currents in very thin oxides on silicon”, Lenahan, P.M.(1); Kang, A.Y.(1); Campbell, J.P.(1),(1) Pennsylvania State Univ., University Park, PA, United States, Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices (SPIE Vol.4746), 0-8194-4500-2, 608-15 vol.1 2002

  95. “Density of states of Pb1 Si/SiO2 interface trap centers”, Campbell, J.P.(1); Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 80, n 11, 1945-7 18 March 2002

  96. “Direct experimental evidence for atomic scale structural changes involved in the interface-trap transformation process”, Lenahan, P.M.(1); Mishima, T.D.; Jumper, J.; Fogarty, T.N.; Wilkins, R.T.,(1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 48, n 6, pt.1, 2131-5 Dec. 2001

  97. “Atomic-scale processes involved in long-term changes in the density of states distribution at the Si/SiO2 interface”, Lenahan, P.M.(1); Mishima, T.D.(1); Fogarty, T.N.; Wilkins, R.,(1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 79, n 20, 3266-8 12 Nov. 2001

  98. “Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents”, Lenahan, P.M.(1); Mele, J.J.(1); Campbell, J.P.(1); Kang, A.Y.(1); Lowry, R.K.; Woodbury, D.; Liu, S.T.; Weimer, R.,(1) Pennsylvania State Univ., University Park, PA, United States, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167), 0-7803-6587-9, 150-5 2001

  99. “Response to “Comment on `Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 “hyperfine spectrum” ' ” [Appl. Phys. Lett. 78, 1451 (2001)]”, Mishima, T.D.(1); Lenahan, P.M.(1); Weber, W.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 78, n 10, 1453-4 5 March 2001

  100. “Identification of atomic scale defects involved in oxide leakage currents”, Lenahan, P.M.(1); Mele, J.J.(1); Campbell, J.(1); Kang, A.(1); Lowry, R.K.; Woodbury, D.; Liu, S.T.,(1) Pennsylvania State Univ., University Park, PA, United States, 2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515), 0-7803-6392-2, 112-15 2000

  101. “A spin-dependent recombination study of radiation-induced Pb1 centers at the (001) Si/SiO2 interface”, Mishima, T.D.(1); Lenahan, P.M.(1),(1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 47, n 6, pt.3, 2249-55 Dec. 2000

  102. “E' centers and leakage currents in the gate oxides of metal oxide silicon devices”, Lenahan, P.M.(1); Mele, J.J.(1),(1) Pennsylvania State Univ., University Park, PA, United States, Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), v 18, n 4, 2169-73 July 2000

  103. “Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 “hyperfine spectrum””, Mishima, T.D.(1); Lenahan, P.M.(1); Weber, W.,(1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 76, n 25, 3771-3 19 June 2000

  104. “Leakage currents and silicon dangling bonds in amorphous silicon dioxide thin films”, Lenahan, P.M.(1); Mele, J.J.(1); Lowry, R.K.; Woodbury, D.,(1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Journal of Non-Crystalline Solids, v 266-269, 835-9 May 2000

  105. “Oxide leakage currents and oxygen deficient silicon”, Lenahan, P.M.(1); Mele, J.(1); Fattu, M.(1); Lowry, R.K.; Woodbury, D.,(1) Pennsylvania State Univ., University Park, PA, United States, Silicon Nitride and Silicon Dioxide Thin Insulating Films. Proceedings of the Fifth International Symposium (Electrochemical Society Proceedings Vol.99-6), 1-56677-228-1, 50-6 1999

  106. “Predicting radiation response from process parameters: Verification of a physically based predictive model”, Lenahan, P.M.(1); Mele, J.J.(1); Conley, J.F., Jr.; Lowry, R.K.; Woodbury, D.,(1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 46, n 6, pt.1, 1534-43 Dec. 1999

  107. “A preliminary investigation of the kinetics of post-oxidation anneal induced E'-precursor formation”, Conley, J.F., Jr.(1); Lenahan, P.M.; McArthur, W.F.,(1) Commercial Syst., Dynamics Res. Corp., Beaverton, OR, United States, 1998 IEEE International Integrated Reliability Workshop Final Report (Cat. No.98TH8363), 0-7803-4881-8, 62-7 1998

  108. “A comprehensive physically based predictive model for radiation damage in MOS systems”, Lenahan, P.M.(1); Conley, J.R., Jr.,(1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 45, n 6, pt.1, 2413-23 Dec. 1998

  109. “Preliminary investigation of the kinetics of postoxidation rapid thermal anneal induced hole-trap-precursor formation in microelectronic SiO2 films”, Conley, J.F., Jr.(1); Lenahan, P.M.; McArthur, W.F.,(1) Dynamics Res. Corp., Beaverton, OR, United States, Applied Physics Letters, v 73, n 15, 2188-90 12 Oct. 1998

  110. “What can electron paramagnetic resonance tell us about the Si/SiO2 system?”, Lenahan, P.M.(1); Conley, J.F., Jr.,(1) Pennsylvania State Univ., University Park, PA, United States, Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), v 16, n 4, 2134-53 July-Aug. 1998

  111. “Response to “Comment on `A model of hole trapping in SiO2 films on silicon' ” [J. Appl. Phys. 83, 5591 (1998)]”, Lenahan, P.M.(1); Conley, J.F., Jr.,(1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 83, n 10, 5593-4 15 May 1998

  112. “Process integration of an interlevel dielectric (ILDO) module using a building-in reliability approach”, Paulsen, R.E.(1); Kyono, C.S.; Wang, Y.; Klein, K.M.; Lim, I.-S.; Tinkler, S.; Bellamak, B.; Odle, D.W.; Zhou, Z.; Dahl, P.; Giovanetto, M.; Makwana, J.; Patel, S.; Reno, C.; Lenahan, P.M.; Billman, C.A.,(1) Motorola Inc., East Kilbride, United Kingdom, IEEE Transactions on Electron Devices, v 45, n 3, 655-64 March 1998

  113. “A physically based predictive model of charge trapping in gate oxides”, Lenahan, P.M.(1); Conley, J.F., Jr.; Wallace, B.D.,(1) Pennsylvania State Univ., University Park, PA, United States, Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, 1-56677-137-4, 275-84 1997

  114. “Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs”, Billman, C.A.(1); Lenahan, P.M.(1); Weber, W.,(1) Pennsylvania State Univ., University Park, PA, United States, Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, 1-56677-137-4, 134-42 1997

  115. “Trapping centers in borophosphosilicate and phosphosilicate thin films on silicon”, Lenahan, P.M.(1); Billman, C.A.(1); Fuller, R.; Lowry, R.K.; Evans, H.,(1) Pennsylvania State Univ., University Park, PA, United States, Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, 1-56677-137-4, 46-54 1997

  116. “Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs”, Billman, C.A.(1); Lenahan, P.M.(1); Weber, W.,(1) Pennsylvania State Univ., University Park, PA, United States, Materials Reliability in Microelectronics VII. Symposium, , 181-4 1997

  117. “Predictive model of SOI buried oxide charging based on statistical mechanics and spin resonance data”, Conley, J.F., Jr.(1); Lenahan, P.M.; Cole, P.,(1) Dynamics Res. Corp., Beaverton, OR, United States, 1997 IEEE International SOI Conference Proceedings (Cat. No.97CH36069), 0-7803-3938-X, 176-7 1997

  118. “Quantitative model of radiation induced charge trapping in SiO2”, Conley, J.F., Jr.(1); Lenahan, P.M.; Wallace, B.D.; Cole, P.,(1) Dept. of Commercial Syst., Dynamics Res. Corp., Beaverton, OR, United States, IEEE Transactions on Nuclear Science, v 44, n 6, pt.1, 1804-9 Dec. 1997

  119. “A study of charge trapping in PECVD PTEOS films”, Lenahan, P.M.(1); Billman, C.A.(1); Fuller, R.; Evans, H.; Speece, W.H.; DeCrosta, D.; Lowry, R.,(1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 44, n 6, pt.1, 1834-9 Dec. 1997

  120. “A physically based predictive model of Si/SiO2 interface trap generation resulting from the presence of holes in the SiO2”, Lenahan, P.M.(1); Conley, J.F., Jr., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 71, n 21, 3126-8 24 Nov. 1997

  121. “Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs”, Billman, C.A.(1); Lenahan, P.M.(1); Weber, W., (1) Pennsylvania State Univ., University Park, PA, United States, Microelectronic Engineering, v 36, n 1-4, 271-4 June 1997

  122. “A model of hole trapping in SiO2 films on silicon”, Lenahan, P.M.(1); Conley, J.F., Jr; Wallace, B.D., (1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 81, n 10, 6822-4 15 May 1997

  123. “A review of electron spin resonance spectroscopy of defects in thin film SiO2 on Si”, Conley, J.F., Jr.(1); Lenahan, P.M., (1) Commercial Syst., Dynamics Res. Corp., Beaverton, OR, United States, Proceedings of the Third International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 3 1996, , 214-49 1996

  124. “Physically based predictive model of oxide charging [MOSFET gate oxides]”, Conley, J.F., Jr.(1); Lenahan, P.M.; Wallace, B.D., (1) Dynamics Res. Corp., Beaverton, OR, United States, 1996 International Integrated Reliability Workshop Final Report (Cat. No.96TH8215), 0-7803-3598-8, 134-41 1996

  125. “Electron spin resonance characterization of trapping centers in Unibond buried oxides”, Conley, J.F., Jr.(1); Lenahan, P.M.; Wallace, B.D., (1) Commercial Syst., Dynamics Res. Corp., Beaverton, OR, United States, IEEE Transactions on Nuclear Science, v 43, n 6, pt.1, 2635-8 Dec. 1996

  126. “Electron spin resonance evidence that E'γ centers can behave as switching oxide traps”, Conley, J.F., Jr.(1); Lenahan, P.M.(1); Lelis, A.J.; Oldham, T.R., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 42, n 6, pt.1, 1744-9 Dec. 1995

  127. “Electron spin resonance analysis of EP center interactions with H2: evidence for a localized EP center structure”, Conley, J.F., Jr.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 42, n 6, pt.1, 1740-3 Dec. 1995

  128. “Electron spin resonance evidence for a localized EP(E'δ-like) defect structure”, Conley, J.F.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Defect and Impurity Engineered Semiconductors and Devices. Symposium, , 377-80 1995

  129. “Electron spin resonance evidence for the structure of a switching oxide trap: long term structural change at silicon dangling bond sites in SiO2”, Conley, J.F., Jr.(1); Lenahan, P.M.(1); Lelis, A.J.; Oldham, T.R., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 67, n 15, 2179-81 9 Oct. 1995

  130. “Hydrogen complexed EP (E'δ) centers and EP/H2 interactions: implications for EP structure”, Conley, J.F., Jr.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Microelectronic Engineering, v 28, n 1-4, 35-8 June 1995

  131. “The effects of thermal nitridation and reoxidation on the interfacial stress and structure of silicon dioxide gate dielectrics”, Yount, J.T.(1); Lenahan, P.M.(1); Wyatt, P.W., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 77, n 2, 699-705 15 Jan. 1995

  132. “Characterization of two E' center charge traps in conventionally grown thermal SiO2 on Si”, Conley, J.F., Jr.(1); Lenahan, P.M.(1); Evans, H.L.; Lowry, R.K.; Morthorst, T.J., (1) Pennsylvania State Univ., University Park, PA, United States, ESSDERC '94. Proceedings of the 24th European Solid State Device Research Conference, 2-86332-157-9, 309-12 1994

  133. “Electron spin resonance characterization of electrically active oxide defects”, Evans, H.L.(1); Lowry, R.K.(1); Schultz, W.L.(1); Morthorst, T.J.; Lenahan, P.M.; Conley, J.F., (1) Harris Semicond., Melbourne, FL, United States, ISTFA '94. Proceedings of the 20th International Symposium for Testing and Failure Analysis, 0-87170-543-5, 33-40 1994

  134. “The roles of several E' variants in thermal gate oxide reliability”, Conley, J.F.Jr.(1); Lenahan, P.M.(1); Evans, H.L.; Lowry, R.K.; Morthorst, T.J., (1) Pennsylvania State Univ., University Park, PA, United States, Materials Reliability in Microelectronics IV. Symposium, , 37-42 1994

  135. “Comparing the structure and behavior of point defects in silicon oxynitride gate dielectrics formed by NH3-nitridation and N2O-growth/nitridation”, Yount, J.T.(1); Lenahan, P.M.(1); Saks, N.S.; Brown, G.A., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Materials Reliability in Microelectronics IV. Symposium, , 31-6 1994

  136. “Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si”, Conley, J.F., Jr.(1); Lenahan, P.M.(1); Evans, H.L.; Lowry, R.K.; Morthorst, T.J., (1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 76, n 12, 8186-8 15 Dec. 1994

  137. “Radiation effects in oxynitrides grown in N2O”, Saks, N.S.(1); Simons, M.; Fleetwood, D.M.; Yount, J.T.; Lenahan, P.M.; Klein, R.B., (1) Naval Res. Lab., Washington, DC, United States, IEEE Transactions on Nuclear Science, v 41, n 6, pt.1, 1854-63 Dec. 1994

  138. “Observation and electronic characterization of two E' center charge traps in conventionally processed thermal SiO2 on Si”, Conley, J.F., Jr.(1); Lenahan, P.M.(1); Evans, H.L.; Lowry, R.K.; Morthorst, T.J., (1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 65, n 18, 2281-3 31 Oct. 1994

  139. “Observation and electronic characterization of “new” E' center defects in technologically relevant thermal SiO2 on Si: an additional complexity in oxide charge trapping”, Conley, J.F., Jr.(1); Lenahan, P.M.(1); Evans, H.L.; Lowry, R.K.; Morthorst, T.J., (1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 76, n 5, 2872-80 1 Sept. 1994

  140. “Comparison of defect structure in N2O- and NH3-nitrided oxide dielectrics”, Yount, J.T.(1); Lenahan, P.M.(1); Krick, J.T., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 76, n 3, 1754-8 1 Aug. 1994

  141. “Enhancing reliability of CMOS devices using electrical techniques and electron spin resonance spectroscopy”, Evans, H.L.(1); Lowry, R.K.(1); Schultz, W.L.(1); Morthorst, J.; Lenahan, P.M.; Conley, J.F., (1) Harris Semicond. Reliability Eng., Melbourne, FL, United States, 1994 IEEE International Reliability Physics Proceeding. 32nd Annual (Cat. No.94CH3332-4), 0-7803-1357-7, 410-19 1994

  142. “Molecular hydrogen, E' center hole traps, and radiation induced interface traps in MOS devices”, Conley, J.F., Jr.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Penn State Univ., State College, PA, United States, IEEE Transactions on Nuclear Science, v 40, n 6, pt.1, 1335-40 Dec. 1993

  143. “Bridging nitrogen dangling bond centers and electron trapping in amorphous NH3-nitrided and reoxidized nitrided oxide films”, Yount, J.T.(1); Lenahan, P.M.(1), (1) Pennsylvania State Univ., University Park, PA, United States, Journal of Non-Crystalline Solids, v 164-166, pt.2, 1069-72 Dec. 1993

  144. “An electron spin resonance study of the effects of thermal nitridation and reoxidation on Pb centers at (111) Si/SiO2 interfaces”, Yount, J.T.(1); Lenahan, P.M.(1); Wyatt, P.W., (1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 74, n 9, 5867-70 1 Nov. 1993

  145. “Electron spin resonance and instabilities in metal insulator semiconductor systems”, Lenahan, P.M.(1), (1) Pennsylvania State Univ., University Park, PA, United States, Microelectronic Engineering, v 22, n 1-4, 129-38 Aug. 1993

  146. “High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs: 29Si hyperfine spectra”, Gabrys, J.W.(1); Lenahan, P.M.(1); Weber, W., (1) Pennsylvania State Univ., University Park, PA, United States, Microelectronic Engineering, v 22, n 1-4, 273-6 Aug. 1993

  147. “Radiation induced interface states and ESR evidence for room temperature interactions between molecular hydrogen and silicon dangling bonds in amorphous SiO2 films on Si”, Conley, J.F.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Microelectronic Engineering, v 22, n 1-4, 215-18 Aug. 1993

  148. “Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon”, Conley, J.F.(1); Lenahan, P.M.(1), (1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 62, n 1, 40-2 4 Jan. 1993

  149. “Evidence for a deep electron trap and charge compensation in separation by implanted oxygen oxides”, Conley, J.F.(1); Lenahan, P.M.(1); Roitman, P., (1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 39, n 6, pt.1, 2114-20 Dec. 1992

  150. “Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon”, Conley, J.F.(1); Lenahan, P.M.(1), (1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 39, n 6, pt.1, 2186-91 Dec. 1992

  151. “Electron spin resonance study of radiation-induced points defects in nitrided and reoxidized nitrided oxides”, Yount, J.T.(1); Lenahan, P.M.(1); Dunn, G.J., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 39, n 6, pt.1, 2211-19 Dec. 1992

  152. “Electron spin resonance investigation of hole trapping in reoxidized nitrided silicon dioxide”, Chaiyasena, I.A.(1); Lenahan, P.M.(1); Dunn, G.J., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 72, n 2, 820-1 15 July 1992

  153. “Electron spin resonance of separation by implanted oxygen oxides: evidence for structural change and a deep electron trap”, Conley, J.F., Jr.(1); Lenahan, P.M.(1); Roitman, P., (1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 60, n 23, 2889-91 8 June 1992

  154. “ESR study of E' trapping centers in SIMOX oxides”, Conley, J.F.(1); Lenahan, P.M.(1); Roitman, P., (1) Pennsylvania State Univ., University Park, PA, United States, 1991 IEEE International SOI Conference Proceedings (Cat. No.91CH3053-6), 0-7803-0184-6, 12-13 1991

  155. “Electron spin resonance study of E' trapping centers in SIMOX buried oxides”, Conley, J.F.(1); Lenahan, P.M.(1); Roitman, P., (1) Dept. of Eng. Sci., Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 38, n 6, pt.1, 1247-52 Dec. 1991

  156. “Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films”, Kanicki, J.(1); Warren, W.L.; Seager, C.H.; Crowder, M.S.; Lenahan, P.M., (1) IBM Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, United States, Journal of Non-Crystalline Solids, v 137-138, pt.1, 291-4 Dec. 1991

  157. “Direct observation of interfacial point defects generated by channel hot hole injection in n-channel metal oxide silicon field effect transistors”, Krick, J.T.(1); Lenahan, P.M.(1); Dunn, G.J., (1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 59, n 26, 3437-9 23 Dec. 1991

  158. “Comment on `E' centers and nitrogen-related defects in silicon dioxide films' [and reply]”, Warren, W.L.(1); Lenahan, P.M.; Stathis, J.H.; Chapple-Sokol, J.; Tierney, E.; Bates, J., (1) Sandia Nat. Lab., Albuquerque, NM, United States, Applied Physics Letters, v 59, n 22, 2904-5 25 Nov. 1991

  159. “Experimental evidence for two fundamentally different E' precursors in amorphous silicon dioxide”, Warren, W.L.(1); Lenahan, P.M.; Brinker, C.J., (1) Div. of Ceramics, Sandia Nat. Labs., Albuquerque, NM, United States, Journal of Non-Crystalline Solids, v 136, n 1-2, 151-62 1 Dec. 1991

  160. “Photoinduced paramagnetic centers in amorphous silicon oxynitride”, Yount, J.T.(1); Kraus, G.T.(1); Lenahan, P.M.(1); Krick, D.T., (1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 70, n 9, 4969-72 1 Nov. 1991

  161. “A search for protons in irradiated MOS oxides”, Krick, J.T.(1); Gabrys, J.W.(1); Semon, D.I.(1); Lenahan, P.M.(1), (1) Pennsylvania State Univ., University Park, PA, United States, Insulating Films on Semiconductors 1991. Proceedings from the 7th Biennial European Conference, including Satellite Workshops on Silicon on Insulator: Materials and Device Technology and The Physics of Hot Electron Degradation in Si MOSFETs, 0-7503-0168-6, 299-302 1991

  162. “Electron spin resonance study of trapping centers in SIMOX buried oxides”, Conley, J.F.(1); Lenahan, P.M.(1); Roitman, P., (1) Pennsylvania State Univ., University Park, PA, United States, Insulating Films on Semiconductors 1991. Proceedings from the 7th Biennial European Conference, including Satellite Workshops on Silicon on Insulator: Materials and Device Technology and The Physics of Hot Electron Degradation in Si MOSFETs, 0-7503-0168-6, 259-62 1991

  163. “Energy level of the nitrogen dangling bond in amorphous silicon nitride”, Warren, W.L.(1); Kanicki, J.; Robertson, J.; Lenahan, P.M., (1) Sandia Nat Labs., Albuquerque, NM, United States, Applied Physics Letters, v 59, n 14, 22, 24, 26, 28, 30, 32, 34 30 Sept. 1991

  164. “Electrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin films”, Warren, W.L.(1); Lenahan, P.M.; Kanicki, J., (1) Electron. Properties of Mater. Div., Sandia Nat. Labs., Albuquerque, NM, United States, Journal of Applied Physics, v 70, n 4, 2220-5 15 Aug. 1991

  165. “Relationship between strained silicon-oxygen bonds and radiation induced paramagnetic point defects in silicon dioxide”, Warren, W.L.(1); Lenahan, P.M.; Brinker, C.J., (1) Electron. Properties of Mater. Div., Sandia Nat. Labs., Albuquerque, NM, United States, Solid State Communications, v 79, n 2, 137-41 July 1991

  166. “Sol-gel silicate thin-film electronic properties”, Warren, W.L.(1); Lenahan, P.M.(1); Brinker, C.J.; Ashley, C.S.; Reed, S.T.; Shaffer, G.R., (1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 69, n 8, pt.1, 4404-8 15 April 1991

  167. “Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon”, Chaiyasena, I.A.(1); Lenahan, P.M.(1); Dunn, G.J., (1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 58, n 19, 2141-3 13 May 1991

  168. “Direct experimental evidence for a dominant hole trapping center in SIMOX oxides”, Conley, J.F.(1); Lenahan, P.M.(1); Roitman, P., (1) Pennsylvania State Univ., University Park, PA, United States, 1990 IEEE SOS/SOI Technology Conference. (Cat. No.90CH2891-0), 0-87942-573-3, 164-5 1990

  169. “Electron spin resonance studies of silicon dioxide films on silicon in integrated circuits using spin dependent recombination”, Jupina, M.A.(1); Lenahan, P.M.(1), (1) Pennsylvania State Univ., University Park, PA, United States, Atomic Scale Structure of Interfaces Symposium, , 191-6 1990

  170. “Spin dependent recombination: a 29Si hyperfine study of radiation-induced Pb centers at the Si/SiO2 interface”, Jupina, M.A.(1); Lenahan, P.M.(1), (1) Pennsylvania State Univ., Philadelphia, Philadelphia, PA, United States, IEEE Transactions on Nuclear Science, v 37, n 6, pt.1, 1650-7 Dec. 1990

  171. “Electron-nuclear double-resonance and electron-spin-resonance study of silicon dangling-bond centers in silicon nitride”, Warren, W.L.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Physical Review B (Condensed Matter), v 42, n 3, 1773-80 15 July 1990

  172. “First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride”, Warren, W.L.(1); Lenahan, P.M.(1); Curry, S.E.(1), (1) Pennsylvania State Univ., University Park, PA, United States, Physical Review Letters, v 65, n 2, 207-10 9 July 1990

  173. “Interaction of molecular hydrogen with trapped hole E' centers in irradiated and high field stressed metal/oxide/silicon oxides”, Lenahan, P.M.(1); Warren, W.L.(1); Krick, D.T.(1); Dressendorfer, P.V.; Triplett, B.B., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 67, n 12, 7612-14 15 June 1990

  174. “Deposition of high quality sol-gel oxides on silicon”, Warren, W.L.(1); Lenahan, P.M.(1); Brinker, C.J.; Ashley, C.S.; Reed, S.T., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Journal of Electronic Materials, v 19, n 5, 425-8 May 1990

  175. “Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films”, Curry, S.E.(1); Lenahan, P.M.(1); Krick, D.T.(1); Kanicki, J.; Kirk, C.T., (1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 56, n 14, 1359-61 2 April 1990

  176. “First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride”, Lenahan, P.M.(1); Curry, S.E.(1), (1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 56, n 2, 157-9 8 Jan. 1990

  177. “An electron spin resonance study of ISE SOI processed structures”, Lenahan, P.M.(1); Wilson, G.A.(1), (1) Pennsylvania State Univ., University Park, PA, United States, 1989 IEEE SOS/SOI Technology Conference (Cat. No.89CH2796-1), , 83-4 1989

  178. “A spin dependent recombination study of radiation induced defects at and near the Si/SiO2 interface”, Jupina, M.A.(1); Lenahan, P.M.(1), (1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v 36, n 6, pt.1, 1800-7 Dec. 1989

  179. “Fundamental differences in the nature of electrically active point-defects in plasma enhanced chemical vapor deposited and thermal oxide structures”, Warren, W.L.(1); Lenahan, P.M.(1); Robinson, B., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Applied Surface Science, v 39, n 1-4, 406-11 Oct. 1989

  180. “The nature of the dominant deep trap in amorphous silicon nitride films: evidence for a negative correlation energy”, Lenahan, P.M.(1); Krick, D.T.(1); Kanicki, J., (1) Pennsylvania State Univ., University Park, PA, United States, Applied Surface Science, v 39, n 1-4, 392-405 Oct. 1989

  181. “29Si hyperfine spectra and structure of E' dangling-bond defects in plasma-enhanced chemical-vapor deposited silicon dioxide films on silicon”, Warren, W.L.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 66, n 11, 5488-91 1 Dec. 1989

  182. “Electron spin resonance study of defects in PECVD silicon nitride”, Jousse, D.(1); Kanicki, J.(1); Mehran, F.(1); Lenahan, P.M., (1) IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, United States, Proceedings of the Symposium on Dielectric Films on Compound Semiconductors, , 290-8 1988

  183. “Electrical properties of metal-oxide-silicon structures with sol-gel oxides”, Warren, W.L.(1); Lenahan, P.M.(1); Brinker, C.J., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Better Ceramics Through Chemistry III. Symposium, 0-931837-91-X, 803-10 1988

  184. “Nature of the dominant deep trap in amorphous silicon nitride”, Krick, D.T.(1); Lenahan, P.M.(1); Kanicki, J., (1) Pennsylvania State Univ., University Park, PA, United States, Physical Review B (Condensed Matter), v 38, n 12, 8226-9 15 Oct. 1988

  185. “Electrically active point defects in amorphous silicon nitride: an illumination and charge injection study”, Krick, D.T.(1); Lenahan, P.M.(1); Kanicki, J., (1) Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 64, n 7, 3558-63 1 Oct. 1988

  186. “Electron-spin-resonance study of radiation-induced paramagnetic defects in oxides grown on (001) silicon substrates”, Yong Yun Kim(1); Lenahan, P.M., (1) Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 64, n 7, 3551-7 1 Oct. 1988

  187. “Neutral E' centers in microwave downstream plasma-enhanced chemical-vapor-deposited silicon dioxide”, Warren, W.L.(1); Lenahan, P.M.(1); Robinson, B.; Stathis, J.H., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 53, n 6, 482-4 8 Aug. 1988

  188. “Electron-spin-resonance study of defects in plasma-enhanced chemical vapor deposited silicon nitride”, Jousse, D.(1); Kanicki, J.(1); Krick, D.T.; Lenahan, P.M., (1) IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, United States, Applied Physics Letters, v 52, n 6, 445-7 8 Feb. 1988

  189. “The nature of the deep hole trap in MOS oxides”, Witham, H.S.(1); Lenahan, P.M.(1), (1) Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v NS-34, n 6, pt.1, 1147-51 Dec. 1987

  190. “A comparison of positive charge generation in high field stressing and ionizing radiation on MOS structures”, Warren, W.L.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, IEEE Transactions on Nuclear Science, v NS-34, n 6, pt.1, 1355-8 Dec. 1987

  191. “Fundamental differences between thick and thin oxides subjected to high electric fields”, Warren, W.L.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Journal of Applied Physics, v 62, n 10, 4305-8 15 Nov. 1987

  192. “Electronic properties of sol-gel-derived oxides on silicon”, Weimer, R.A.(1); Lenahan, P.M.(1); Marchione, T.A.(1); Brinker, C.J., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 51, n 15, 1179-81 12 Oct. 1987

  193. “Nature of the E' deep hole trap in metal-oxide-semiconductor oxides”, Witham, H.S.(1); Lenahan, P.M.(1), (1) Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 51, n 13, 1007-9 28 Sept. 1987

  194. “Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitride”, Krick, D.T.(1); Lenahan, P.M.(1); Kanicki, J., (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 51, n 8, 608-10 24 Aug. 1987

  195. “Generation of paramagnetic point defects in silicon dioxide films on silicon through electron injection and exposure to ionizing radiation”, Lenahan, P.M.(1); Warren, W.L.(1); Dressendorfer, P.V.; Mikawa, R.E., (1) Pennsylvania State Univ., University Park, PA, United States, Zeitschrift fur Physikalische Chemie, Neue Folge, v 151, pt.1-2, 235-50 1987

  196. “Electron spin resonance study of high field stressing in metal-oxide-silicon device oxides”, Warren, W.L.(1); Lenahan, P.M.(1), (1) Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, United States, Applied Physics Letters, v 49, n 19, 1296-8 10 Nov. 1986

  197. “Thermal-equilibrium defect processes in hydrogenated amorphous silicon”, Smith, Z.E.(1); Aljishi, S.(1); Slobodin, D.(1); Chu, V.(1); Wagner, S.(1); Lenahan, P.M.; Arya, R.R.; Bennett, M.S., (1) Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, United States, Physical Review Letters, v 57, n 19, 2450-3 10 Nov. 1986

  198. “Electron spin resonance study of interface states induced by electron injection in metal-oxide-semiconductor devices”, Mikawa, R.E.(1); Lenahan, P.M., (1) Sandia Nat. Lab., Albuquerque, NM, United States, Journal of Applied Physics, v 59, n 6, 2054-9 15 March 1986

  199. “Dangling bonds and sub-gap optical absorption in silicon”, Seager, C.H.(1); Lenahan, P.M.(1); Brower, K.L.(1); Mikawa, R.E.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Microscopic Identification of Electronic Defects in Semiconductors, 0-931837-11-1, 539-44 1985

  200. “Optical absorption and dangling bonds in damaged silicon”, Seager, C.H.(1); Lenahan, P.M.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Journal of Applied Physics, v 58, n 7, 2709-12 1 Oct. 1985

  201. “Dangling bonds and the Urbach tail in silicon”, Seager, C.H.(1); Lenahan, P.M.(1); Brower, K.L.(1); Mikawa, R.E.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Journal of Applied Physics, v 58, n 7, 2704-8 1 Oct. 1985

  202. “Structural damage at the Si/SiO2 interface resulting from electron injection in metal-oxide-semiconductor devices”, Mikawa, R.E.(1); Lenahan, P.M.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Applied Physics Letters, v 46, n 6, 550-2 15 March 1985

  203. “A comparison of ionizing radiation and hot electron effects in MOS structures”, Milawa, R.E.(1); Lenahan, P.M.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, IEEE Transactions on Nuclear Science, v NS-31, n 6, 1573-5 Dec. 1984

  204. “Post-shock chemical and ESR analysis of acrylamide and selected anthracene derivatives”, Dodson, B.W.(1); Arnold, C., Jr.(1); Venturini, E.L.(1); Lenahan, P.M.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Shock Waves in Condensed Matter - 1983. Proceedings of the American Physical Society Topical Conference, 0-444-86904-2, 423-5 1984

  205. “Effects of light and modulation frequency on spin-dependent trapping at silicon grain boundaries”, Lenahan, P.M.(1); Schubert, W.K.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Physical Review B (Condensed Matter), v 30, n 3, 1544-6 1 Aug. 1984

  206. “Hole traps and trivalent silicon centers in metal/oxide/silicon devices”, Lenahan, P.M.(1); Dressendorfer, P.V.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Journal of Applied Physics, v 55, n 10, 3495-9 15 May 1984

  207. “Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structures”, Lenahan, P.M.(1); Dressendorfer, P.V.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Applied Physics Letters, v 44, n 1, 96-8 1 Jan. 1984

  208. “Microstructural variations in radiation hard and soft oxides observed through electron spin resonance”, Lenahan, P.M.(1); Dressendorfer, P.V.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, IEEE Transactions on Nuclear Science, v NS-30, n 6, 4602-4 Dec. 1983

  209. “Spin dependent trapping in a polycrystalline silicon integrated circuit resistor”, Schubert, W.K.(1); Lenahan, P.M.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Applied Physics Letters, v 43, n 5, 497-9 1 Sept. 1983

  210. “Spin dependent trapping at a silicon grain boundary”, Lenahan, P.M.(1); Schubert, W.K.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Solid State Communications, v 47, n 6, 423-5 Aug. 1983

  211. “An electron spin resonance study of radiation-induced electrically active paramagnetic centers at the Si/SiO2 interface”, Lenahan, P.M.(1); Dressendorfer, P.V.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Journal of Applied Physics, v 54, n 3, 1457-60 March 1983

  212. “Radiation-induced paramagnetic defects in MOS structures”, Lenahan, P.M.(1); Dressendorfer, P.V.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, IEEE Transactions on Nuclear Science, v ns-29, n 6, 1459-61 Dec. 1982

  213. “Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface”, Lenahan, P.M.(1); Dressendorfer, P.V.(1), (1) Sandai Nat. Labs., Albuquerque, MN, United States, Applied Physics Letters, v 41, n 6, 542-4 15 Sept. 1982

  214. “Defects and impurities in thermal oxides on silicon”, Brower, K.L.(1); Lenahan, P.M.(1); Dressendorfer, P.V.(1), (1) Sandia Nat. Lab., Albuquerque, NM, United States, Applied Physics Letters, v 41, n 3, 251-3 1 Aug. 1982

  215. “Radiation-induced trivalent silicon defect buildup at the Si-SiO2 interface in MOS structures”, Lenahan, P.M.(1); Brower, K.L.(1); Dressendorfer, P.V.(1); Johnson, W.C., (1) Sandia Nat. Lab., Albuquerque, NM, United States, IEEE Transactions on Nuclear Science, v ns-28, n 6, 4105-6 Dec. 1981

  216. “Giant dielectric constant in the one-dimensional semiconductor Meφ3As(TCNQ)2”, Lenahan, P.M.(1); Rowland, T.J.(1), (1) Dept. of Metall. & Min. Eng., Univ. of Illinois, Urbana, Urbana, IL, United States, Solid State Communications, v 37, n 3, 223-7 Jan. 1981

  217. “Non-Ohmic electrical conductivity and giant dielectric constant in the quasi-one-dimensional semiconductor methyltriphenylarsonium ditetracyanoquinodimethanide”, Lenahan, P.M.(1); Rowland, T.J.(1), (1) Dept. of Metall. & Min. Eng., Univ. of Illinois, Urbana, Urbana, IL, United States, Physical Review B (Condensed Matter), v 23, n 2, 752-61 15 Jan. 1981

  218. “Growth and characterization of large crystals of methyltriphenylarsonium tetracyanoquinodimethane [Meφ3As(TCNQ)2]”, Lenahan, P.M.(1); DePasquali, G.(1), (1) Phys. Dept., Univ. of Illinois, Urbana, Urbana, IL, United States, Journal of Crystal Growth, v 50, n 3, 739-42 Nov. 1980

  219. “Non-ohmic electrical conduction in the highly one-dimensional semiconductor methyltriphenylarsonium tetracyanoquinodimethane”, Lenahan, P.M.(1); Rowland, T.J.(1), (1) Mettall. & Mining Engng. Dept., Univ. of Illinois at Urbana-Champaign, Urbana, IL, United States, Physical Review Letters, v 43, n 12, 879-82 17 Sept. 1979

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